SCI, SSCI ve AHCI İndekslerine Giren Dergilerde Yayınlanan Makaleler
Optical properties of InN grown on templates with controlled surface polarities
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
, cilt.207, sa.10, ss.2351-2354, 2010 (SCI-Expanded)
The influence of the group V/III molar precursor ratio on the structural properties of InGaN layers grown by HPCVD
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
, cilt.207, sa.6, ss.1379-1382, 2010 (SCI-Expanded)
The characterization of InN growth under high-pressure CVD conditions
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS
, cilt.242, sa.15, ss.2985-2994, 2005 (SCI-Expanded)
Hakemli Kongre / Sempozyum Bildiri Kitaplarında Yer Alan Yayınlar
THE ROLE OF THICKNESS ON INFRARED OPTICAL PROPERTIES OF GALLIUM NITRIDE THIN FILMS GROWN BY HOLLOW CATHODE PLASMA ASSITED ATOMIC LAYER DEPOSITION
Turkisk Physical Society 32nd International Physics Congress, Bodrum, Türkiye, 6 - 09 Eylül 2016
Infrared dielectric functions phonon modes and band gap properties of plasma assisted ALD grown InxGa1 xN films
The 16th International Conference on Atomic Layer Deposition, Dublin, İrlanda, 24 - 27 Temmuz 2016
The Role of Film Thickness on the Visible UV and Infrared Optical Properties of GaN Films Grown By Hollow Cathode Plasma Assisted Atomic Layer Deposition
The 16th International Conference on Atomic Layer Deposition, Dublin, İrlanda, 24 - 27 Temmuz 2016
Influence of N2 H2 and N2 Plasma on Binary III Nitride Films Prepared by Hollow Cathode Plasma Assisted Atomic Layer Deposition
The 16th International Conference on Atomic Layer Deposition, Dublin, İrlanda, 24 - 27 Temmuz 2016
Comparison of Trimethylgallium and Triethylgallium as Ga Source Materials for the Growth of Ultra thin GaN Films via Hollow cathode Plasma assisted ALD
American Vacuum Society, Portland, Amerika Birleşik Devletleri, 28 Haziran - 01 Temmuz 2015