Prof. Dr. MUSTAFA ALEVLİ | AVESİS

Akademik Veri Yönetim Sistemi

Yayınlar & Eserler

Makaleler 37

1. Effect of Al3+ ion on the electrochromic and optical properties of TiO2 ultra-thin film

Uysal D., Mak A. K., ALEVLİ M., Öztürk O.

Journal of Alloys and Compounds , cilt.1041, 2025 (SCI-Expanded)

2. Structural, optical, and electrochromic properties of Nb-doped WO3 thin films

Mak A. K., Uysal D., ALEVLİ M., Karabulut M., Öztürk O., Tuna Ö.

Journal of Alloys and Compounds , cilt.1031, 2025 (SCI-Expanded)

3. Incorporation Mechanism of Potassium in FAPbI3 Perovskite Solar Cell Materials

ALEVLİ M., Gungor N., KAVAK P., ŞAHİN N., Corcor A., Topal I., et al.

Journal of Physical Chemistry C , cilt.128, sa.7, ss.2759-2766, 2024 (SCI-Expanded) Sürdürülebilir Kalkınma

Sürdürülebilir Kalkınma

4. Oxygen incorporation in AlN films grown by plasma-enhanced atomic layer deposition

Gungor N., ALEVLİ M.

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A , cilt.40, sa.2, 2022 (SCI-Expanded)

5. Effect of N-2/H-2 plasma on the growth of InN thin films on sapphire by hollow-cathode plasma-assisted atomic layer deposition

ALEVLİ M., Gungor N.

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A , cilt.38, sa.6, 2020 (SCI-Expanded)

6. Visible/infrared refractive index and phonon properties of GaN films grown on sapphire by hollow-cathode plasma-assisted atomic layer deposition

Gungor N., ALEVLİ M.

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films , cilt.37, sa.5, 2019 (SCI-Expanded)

7. Role of film thickness on the structural and optical properties of GaN on Si (100) grown by hollow-cathode plasma-assisted atomic layer deposition

Gungor N., ALEVLİ M.

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A , cilt.36, sa.2, 2018 (SCI-Expanded)

8. Influence of N-2/H-2 and N-2 plasma on binary III-nitride films prepared by hollow-cathode plasma-assisted atomic layer deposition

ALEVLİ M., Gungor N.

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A , cilt.36, sa.1, 2018 (SCI-Expanded)

9. Enhancement in c-Si solar cells using 16 nm InN nanoparticles

Chowdhury F. I., Alnuaimi A., Alkis S., ORTAÇ B., Akturk S., ALEVLİ M., et al.

MATERIALS RESEARCH EXPRESS , cilt.3, sa.5, 2016 (SCI-Expanded)

10. Comparison of trimethylgallium and triethylgallium as "Ga" source materials for the growth of ultrathin GaN films on Si (100) substrates via hollow-cathode plasma-assisted atomic layer deposition

ALEVLİ M., Haider A., Kizir S., Leghari S. A., BIYIKLI N.

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A , cilt.34, sa.1, 2016 (SCI-Expanded)

11. Substrate temperature influence on the properties of GaN thin films grown by hollow-cathode plasma-assisted atomic layer deposition

ALEVLİ M., Gungor N., Haider A., Kizir S., Leghari S. A., BIYIKLI N.

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A , cilt.34, sa.1, 2016 (SCI-Expanded)

12. Enhancement of polycrystalline silicon solar cells efficiency using indium nitride particles

Alkis S., Chowdhury F. I., ALEVLİ M., Dietz N., Yalizay B., Akturk S., et al.

JOURNAL OF OPTICS , cilt.17, sa.10, 2015 (SCI-Expanded)

13. A Near-Infrared Range Photodetector Based on Indium Nitride Nanocrystals Obtained Through Laser Ablation

Tekcan B., Alkis S., ALEVLİ M., Dietz N., ORTAÇ B., BIYIKLI N., et al.

IEEE ELECTRON DEVICE LETTERS , cilt.35, sa.9, ss.936-938, 2014 (SCI-Expanded)

14. Enhanced memory effect via quantum confinement in 16nm InN nanoparticles embedded in ZnO charge trapping layer

El-Atab N., Cimen F., Alkis S., Orta B., ALEVLİ M., Dietz N., et al.

APPLIED PHYSICS LETTERS , cilt.104, sa.25, 2014 (SCI-Expanded)

15. Thermal stability of InN epilayers grown by high pressure chemical vapor deposition

Acharya A. R., Gamage S., Senevirathna M. K. I., ALEVLİ M., Bahadir K., Melton A. G., et al.

APPLIED SURFACE SCIENCE , cilt.268, ss.1-5, 2013 (SCI-Expanded)

16. Generation of InN nanocrystals in organic solution through laser ablation of high pressure chemical vapor deposition-grown InN thin film

Alkis S., ALEVLİ M., Burzhuev S., Vural H. A., OKYAY A. K., ORTAÇ B.

JOURNAL OF NANOPARTICLE RESEARCH , cilt.14, sa.8, 2012 (SCI-Expanded)

17. Optical properties of AlN thin films grown by plasma enhanced atomic layer deposition

Alevli M., Ozgit C., Donmez I., BIYIKLI N.

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A , cilt.30, sa.2, 2012 (SCI-Expanded)

18. Structural properties of AlN films deposited by plasma-enhanced atomic layer deposition at different growth temperatures

Alevli M., Ozgit C., Donmez I., Biyikli N.

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE , cilt.209, ss.266-271, 2012 (SCI-Expanded)

19. Self-limiting low-temperature growth of crystalline AlN thin films by plasma-enhanced atomic layer deposition

Ozgit C., Donmez I., ALEVLİ M., BIYIKLI N.

THIN SOLID FILMS , cilt.520, sa.7, ss.2750-2755, 2012 (SCI-Expanded)

20. Atomic layer deposition of GaN at low temperatures

Ozgit C., Donmez I., ALEVLİ M., BIYIKLI N.

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A , cilt.30, sa.1, 2012 (SCI-Expanded)

21. The Influence of Growth Temperature on the Properties of AlN Films Grown by Atomic Layer Deposition

ALEVLİ M., Ozgit C., Donmez i.

ACTA PHYSICA POLONICA A , cilt.120, 2011 (SCI-Expanded)

22. The influence of N-2/H-2 and ammonia N source materials on optical and structural properties of AlN films grown by plasma enhanced atomic layer deposition

ALEVLİ M., Ozgit C., Donmez I., BIYIKLI N.

JOURNAL OF CRYSTAL GROWTH , cilt.335, sa.1, ss.51-57, 2011 (SCI-Expanded)

23. Optical properties of InN grown on templates with controlled surface polarities

Kirste R., Wagner M., Schulze J., Strittmatter A., Collazo R., Sitar Z., et al.

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE , cilt.207, sa.10, ss.2351-2354, 2010 (SCI-Expanded)

24. The influence of the group V/III molar precursor ratio on the structural properties of InGaN layers grown by HPCVD

DURKAYA G., BUEGLER M., ATALAY R., Senevirathna I., ALEVLİ M., HİTZEMANN O., et al.

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE , cilt.207, sa.6, ss.1379-1382, 2010 (SCI-Expanded)

25. Optical characterization of InN layers grown by high-pressure chemical vapor deposition

ALEVLİ M., ATALAY R., DURKAYA G., Weesekara A., Perera A. G. U., Dietz N., et al.

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A , cilt.26, sa.4, ss.1023-1026, 2008 (SCI-Expanded)

26. Desorption of hydrogen from InN(000(1)over-bar) observed by HREELS

Bhatta R., Thoms B. D., ALEVLİ M., Dietz N.

SURFACE SCIENCE , cilt.602, sa.7, ss.1428-1432, 2008 (SCI-Expanded)

27. The influence of substrate polarity on the structural quality of InN layers grown by high-pressure chemical vapor deposition

Dietz N., ALEVLİ M., ATALAY R., DURKAYA G., Collazo R., Tweedie J., et al.

APPLIED PHYSICS LETTERS , cilt.92, sa.4, 2008 (SCI-Expanded)

28. Surface electron accumulation in indium nitride layers grown by high pressure chemical vapor deposition

Bhatta R., Thoms B., ALEVLİ M., Dietz N.

SURFACE SCIENCE , cilt.601, sa.19, 2007 (SCI-Expanded)

29. Carrier concentration and surface electron accumulation in indium nitride layers grown by high pressure chemical vapor deposition

Bhatta R. P., Thoms B. D., Weerasekera A., Perera A. G., ALEVLİ M., Dietz N.

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A , cilt.25, sa.4, ss.967-970, 2007 (SCI-Expanded)

30. Performance improvements of ultraviolet/infrared dual-band detectors

Perera A., Ariyawansa G., Rinzan M., Stevens M., ALEVLİ M., Dietz N., et al.

INFRARED PHYSICS & TECHNOLOGY , cilt.50, ss.142-148, 2007 (SCI-Expanded)

31. Characterization of InN layers grown by high-pressure chemical vapor deposition

ALEVLİ M., DURKAYA G., Weerasekara A., Perera A. G. U., Dietz N., Fenwick W., et al.

APPLIED PHYSICS LETTERS , cilt.89, sa.11, 2006 (SCI-Expanded)

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32. GaN/AlGaN ultraviolet/infrared dual-band detector

Ariyawansa G., Rinzan M. B., ALEVLİ M., Strassburg M., Dietz N., Perera A. G. U., et al.

APPLIED PHYSICS LETTERS , cilt.89, sa.9, 2006 (SCI-Expanded)

33. Surface structure, composition, and polarity of indium nitride grown by high-pressure chemical vapor deposition

Bhatta R. P., Thoms B. D., ALEVLİ M., Woods V., Dietz N.

APPLIED PHYSICS LETTERS , cilt.88, sa.12, 2006 (SCI-Expanded)

34. The Fermi level dependence of the optical and magnetic properties of Ga1-xMnxN grown by metal-organic chemical vapour deposition

Strassburg M., Kane M., Asghar A., Song Q., Zhang Z. J., Senawiratne J., et al.

JOURNAL OF PHYSICS-CONDENSED MATTER , cilt.18, sa.9, ss.2615-2622, 2006 (SCI-Expanded) Sürdürülebilir Kalkınma

Sürdürülebilir Kalkınma

35. The characterization of InN growth under high-pressure CVD conditions

Dietz N., ALEVLİ M., Woods V., Strassburg M., Kang H., Ferguson I.

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS , cilt.242, sa.15, ss.2985-2994, 2005 (SCI-Expanded)

36. The effects of light heavy hole transitions on the cutoff wavelengths of far infrared detectors

Perera A. G. U., Matsik S. G., Rinzan M. B., Weerasekara A., ALEVLİ M., Liu H., et al.

Infrared Physics , cilt.44, ss.347-353, 2003 (SCI-Expanded)

37. Equation of state of alkane and alkylbenzene liquids: A test of the group contributions of scaling parameters for physical and chemical mixtures

Yahsi U., Kuzeci S., Alevli M.

INTERNATIONAL JOURNAL OF THERMOPHYSICS , cilt.23, sa.2, ss.501-512, 2002 (SCI-Expanded)

Hakemli Bilimsel Toplantılarda Yayımlanmış Bildiriler 19

1. Critical Layer Thickness of GaN Thin Films on sapphire grown by hollow-cathode plasma assisted tomic layer deposition

ALEVLİ M., Gungor N.

European Materials Research Society Spring 2018, Fransa, 18 - 22 Haziran 2018, (Özet Bildiri)

2. Optical properties of GaN and InN on quartz grown by hollow-cathode plasma-assisted atomic layer deposition

Gungor N., ALEVLİ M.

ICG Annual meeting, 22 - 25 Ekim 2017, (Özet Bildiri)

3. Critical Thickness on Optical Properties at UV VIS and Infrared Region of GaN Thin Films Grown by Hollow Cathode Assisted Atomic Layer Deposition

Gungor N., ALEVLİ M.

Fotonik 2016 /18. ulusal optik, Elektro Optik Fotonik Çalıştayı, Ankara, Türkiye, 23 Eylül 2016

4. THE ROLE OF THICKNESS ON INFRARED OPTICAL PROPERTIES OF GALLIUM NITRIDE THIN FILMS GROWN BY HOLLOW CATHODE PLASMA ASSITED ATOMIC LAYER DEPOSITION

Gungor N., ALEVLİ M., Kizir S., Haider A., BIYIKLI N.

Turkisk Physical Society 32nd International Physics Congress, Bodrum, Türkiye, 6 - 09 Eylül 2016

5. Infrared dielectric functions phonon modes and band gap properties of plasma assisted ALD grown InxGa1 xN films

ALEVLİ M., Gungor N., Haider A., Kızır S., BIYIKLI N.

The 16th International Conference on Atomic Layer Deposition, Dublin, İrlanda, 24 - 27 Temmuz 2016

6. Influence of N2 H2 and N2 Plasma on Binary III Nitride Films Prepared by Hollow Cathode Plasma Assisted Atomic Layer Deposition

ALEVLİ M., Gungor N., Ozgit Akgun C., Haider A., Kızır S., BIYIKLI N.

The 16th International Conference on Atomic Layer Deposition, Dublin, İrlanda, 24 - 27 Temmuz 2016, (Özet Bildiri)

7. The Role of Film Thickness on the Visible UV and Infrared Optical Properties of GaN Films Grown By Hollow Cathode Plasma Assisted Atomic Layer Deposition

ALEVLİ M., Gungor N., Haider A., Kizir S., BIYIKLI N.

The 16th International Conference on Atomic Layer Deposition, Dublin, İrlanda, 24 - 27 Temmuz 2016, (Özet Bildiri)

8. Effect of Substrate Temperature and Ga source Precursor on Growth and Material Properties of GaN Grown by Hollow Cathode Plasma Assisted Atomic Layer Deposition

Haider A., Kizir S., Deminskyi P., Tsymbalenko O., Leghari S. A., BIYIKLI N., et al.

36th IEEE International Conference on Electronics and Nanotechnology (ELNANO), Kyiv, Ukrayna, 19 - 21 Nisan 2016, ss.132-134, (Tam Metin Bildiri)

9. Comparison Studies of GaN Grown with Trimethylgallium and Triethylgallium for Optoelectronic Applications

ALEVLİ M., Heider A., Gungör N., Kizir S., Sabri A., OKYAY A. K., et al.

American vacuum Society 62 nd İnternational Meeting, San-Jose, Kostarika, 18 - 23 Ekim 2015, (Özet Bildiri)

10. Hollow Cathode Plasma Assisted Atomic Layer Deposition of Wurtzite InN and InxGa1 xN Thin Films with Low Impurity Content

Haider A., Kizir S., Ozgit Akgun C., Goldenberg E., ALEVLİ M., OKYAY A. K., et al.

American Vacuum Society 62nd international symposium, 18 - 23 Ekim 2015, (Özet Bildiri)

11. Comparison of Trimethylgallium and Triethylgallium as Ga Source Materials for the Growth of Ultra thin GaN Films via Hollow cathode Plasma assisted ALD

ALEVLİ M., Güngör N., Özgit Akgün Ç., Haider A., Kizir S., Leghari S., et al.

American Vacuum Society, Portland, Amerika Birleşik Devletleri, 28 Haziran - 01 Temmuz 2015, (Özet Bildiri)

12. Substrate Temperature Influence on the Properties of GaN Thin Films Grown by Hollow cathode Plasma assisted Atomic Layer Deposition

ALEVLİ M., Güngör N., Ozgit Akgun C., Kızır S., Haider A., Leghari S., et al.

American Vacuum Society 15th Conference on Atomic Layer deposition, Portland, Amerika Birleşik Devletleri, 28 - 01 Haziran 2015, ss.370

13. Enhanced Light Scattering with Energy Downshifting Using 16 nm Indium Nitride Nanoparticles for Improved Thin film a Si N i P Solar Cells

Chowdhury F. I., İslam K., Alkis S., ORTAÇ B., ALEVLİ M., Dietz N., et al.

227th Electro Chemical Society meeting, Chicago, Amerika Birleşik Devletleri, 24 - 28 Mayıs 2015, cilt.66, ss.9-16, (Tam Metin Bildiri)

14. Effect of reactor pressure on optical and electrical properties of InN films grown by high-pressure chemical vapor deposition

Alevli M., Gungor N., Alkis S., Ozgit-Akgun C., Donmez I., Okyay A. K., et al.

5th International Symposium on Growth of III-Nitrides (ISGN), Georgia, Amerika Birleşik Devletleri, 18 - 22 Mayıs 2014, cilt.12, ss.423-429, (Tam Metin Bildiri)

15. Growth temperature - Phase stability relation in In1-xGa xN epilayers grown by high-pressure CVD

Durkaya G., Alevli M., Buegler M., Atalay R., Gamage S., Kaiser M., et al.

2009 MRS Fall Meeting, Boston, MA, Amerika Birleşik Devletleri, 30 Kasım - 04 Aralık 2009, cilt.1202, ss.277-282, (Tam Metin Bildiri)

16. Optical and structural properties of InN grown by HPCVD

Buegler M., Alevli M., Atalay R., Durkaya G., Senevirathna I., Jamil M., et al.

9th International Conference on Solid State Lighting, San Diego, CA, Amerika Birleşik Devletleri, 3 - 05 Ağustos 2009, cilt.7422, (Tam Metin Bildiri)

17. Properties of InN layers grown by high pressure CVD

Alevli M., Durkaya G., Kirste R., Weesekara A., Perera U., Fenwick W., et al.

2006 MRS Fall Meeting, Boston, MA, Amerika Birleşik Devletleri, 27 Kasım - 01 Aralık 2006, cilt.955, ss.291-296, (Tam Metin Bildiri)

18. Properties of InN grown by high-pressure CVD

Alevli M., Durkaya G., Woods V., Haboeck U., Kang H., Senawiratne J., et al.

2005 Materials Research Society Fall Meeting, Boston, MA, Amerika Birleşik Devletleri, 28 Kasım - 02 Aralık 2005, cilt.892, ss.77-82, (Tam Metin Bildiri)

19. The growth of InN and related alloys by high-pressure CVD

Dietz N., Alevli M., Kang H., Straßburg M., Woods V., Ferguson I. T., et al.

Operational Characteristics and Crystal Growth of Nonlinear Optical Materials II, San Diego, CA, Amerika Birleşik Devletleri, 31 Temmuz - 01 Ağustos 2005, cilt.5912, ss.1-8, (Tam Metin Bildiri)

Metrikler

Yayın

56

Yayın (WoS)

39

Yayın (Scopus)

45

Atıf (WoS)

780

H-İndeks (WoS)

15

Atıf (Scopus)

860

H-İndeks (Scopus)

16

H-İndeks (Scholar)

19

Proje

3

Tez Danışmanlığı

3

Açık Erişim

3

BM Sürdürülebilir Kalkınma Amaçları