Enhancement in c-Si solar cells using 16 nm InN nanoparticles


Chowdhury F. I. , Alnuaimi A., Alkis S., ORTAÇ B., Akturk S., ALEVLİ M. , ...Daha Fazla

MATERIALS RESEARCH EXPRESS, cilt.3, 2016 (SCI İndekslerine Giren Dergi) identifier

Özet

In this work, 16 nm indium nitride (InN) nanoparticles (NPs) are used to increase the performance of thin-film c-Si HIT solar cells. InN NPs were spin-coated on top of an ITO layer of c-Si HIT solar cells. The c-Si HIT cell is a stack of 2 mu m p type c-Si, 4-5 nmn type a-Si, 15 nm n(+) type a-Si and 80 nm ITO grown on a p(+) type Si substrate. On average, short circuit current density (J(sc)) increases from 19.64 mA cm(-2) to 21.54 mA cm(-2) with a relative improvement of 9.67% and efficiency increases from 6.09% to 7.09% with a relative improvement of 16.42% due to the presence of InN NPs. Reflectance and internal/external quantum efficiency (IQE/EQE) of the devices were also measured. Peak EQE was found to increase from 74.1% to 81.3% and peak IQE increased from 93% to 98.6% for InN NPs coated c-Si HIT cells. Lower reflection of light due to light scattering is responsible for performance enhancement between 400-620 nm while downshifted photons are responsible for performance enhancement from 620 nm onwards.