Surface structure, composition, and polarity of indium nitride grown by high-pressure chemical vapor deposition
APPLIED PHYSICS LETTERS, cilt.88, sa.12, 2006 (SCI-Expanded, Scopus)
- Yayın Türü: Makale / Tam Makale
- Cilt numarası: 88 Sayı: 12
- Basım Tarihi: 2006
- Doi Numarası: 10.1063/1.2187513
- Dergi Adı: APPLIED PHYSICS LETTERS
- Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
- Marmara Üniversitesi Adresli: Hayır
Özet
The structure and surface bonding configuration of InN layers grown by high-pressure chemical vapor deposition have been studied. Atomic hydrogen cleaning produced a contamination free surface. Low-energy electron diffraction yielded a 1x1 hexagonal pattern demonstrating a well-ordered c-plane surface. High-resolution electron energy loss spectra exhibited a Fuchs-Kliewer surface phonon and modes assigned to a surface N-H species. Assignments were confirmed by observation of isotopic shifts following atomic deuterium cleaning. No In-H species were observed, and since an N-H termination of the surface was observed, N-polarity indium nitride is indicated.