Surface structure, composition, and polarity of indium nitride grown by high-pressure chemical vapor deposition


Bhatta R. P. , Thoms B. D. , ALEVLİ M. , Woods V., Dietz N.

APPLIED PHYSICS LETTERS, vol.88, no.12, 2006 (Journal Indexed in SCI) identifier identifier

  • Publication Type: Article / Article
  • Volume: 88 Issue: 12
  • Publication Date: 2006
  • Doi Number: 10.1063/1.2187513
  • Title of Journal : APPLIED PHYSICS LETTERS

Abstract

The structure and surface bonding configuration of InN layers grown by high-pressure chemical vapor deposition have been studied. Atomic hydrogen cleaning produced a contamination free surface. Low-energy electron diffraction yielded a 1x1 hexagonal pattern demonstrating a well-ordered c-plane surface. High-resolution electron energy loss spectra exhibited a Fuchs-Kliewer surface phonon and modes assigned to a surface N-H species. Assignments were confirmed by observation of isotopic shifts following atomic deuterium cleaning. No In-H species were observed, and since an N-H termination of the surface was observed, N-polarity indium nitride is indicated.