The influence of substrate polarity on the structural quality of InN layers grown by high-pressure chemical vapor deposition

Dietz N., ALEVLİ M., ATALAY R., DURKAYA G., Collazo R., Tweedie J., ...Daha Fazla

APPLIED PHYSICS LETTERS, cilt.92, sa.4, 2008 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 92 Sayı: 4
  • Basım Tarihi: 2008
  • Doi Numarası: 10.1063/1.2840192
  • Dergi Adı: APPLIED PHYSICS LETTERS
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Marmara Üniversitesi Adresli: Hayır

Özet

The influence of substrate polarity on the properties of InN layers grown by high-pressure chemical vapor deposition has been studied. The 2 Theta-omega x-ray diffraction scans on InN layers deposited on polar GaN epilayers revealed single-phase InN(0002) with a full width at half maximum (FWHM) of around 200 arc sec. InN layers grown on N-polar GaN exhibit larger FWHMs. Rocking curve analysis confirmed single-phase InN for both growth polarities, with FWHM values for omega-RC(002) at 2080 arc sec for InN grown on Ga-polar templates. The A(1)(LO) Raman mode analysis shows higher free carrier concentrations in InN grown on N-polar templates, indicating that polarity affects the incorporation of impurities. (c) 2008 American Institute of Physics.