A Near-Infrared Range Photodetector Based on Indium Nitride Nanocrystals Obtained Through Laser Ablation


Tekcan B., Alkis S., ALEVLİ M. , Dietz N., ORTAÇ B., BIYIKLI N., ...Daha Fazla

IEEE ELECTRON DEVICE LETTERS, cilt.35, ss.936-938, 2014 (SCI İndekslerine Giren Dergi) identifier identifier

  • Cilt numarası: 35 Konu: 9
  • Basım Tarihi: 2014
  • Doi Numarası: 10.1109/led.2014.2336795
  • Dergi Adı: IEEE ELECTRON DEVICE LETTERS
  • Sayfa Sayıları: ss.936-938

Özet

We present a proof-of-concept photodetector that is sensitive in the near-infrared (NIR) range based on InN nanocrystals. Indium nitride nanocrystals (InN-NCs) are obtained through laser ablation of a high pressure chemical vapor deposition grown indium nitride thin film and are used as optically active absorption region. InN-NCs are sandwiched between thin insulating films to reduce the electrical leakage current. Under -1 V applied bias, the recorded photoresponsivity values within 600-1100-nm wavelength range are as high as 3.05 x 10(-2) mA/W. An ultrathin layer of nanocrystalline InN thin film is, therefore, a promising candidate for NIR detection in large area schemes.