A Near-Infrared Range Photodetector Based on Indium Nitride Nanocrystals Obtained Through Laser Ablation

Tekcan B., Alkis S., ALEVLİ M., Dietz N., ORTAÇ B., BIYIKLI N., ...Daha Fazla

IEEE ELECTRON DEVICE LETTERS, cilt.35, sa.9, ss.936-938, 2014 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 35 Sayı: 9
  • Basım Tarihi: 2014
  • Doi Numarası: 10.1109/led.2014.2336795
  • Dergi Adı: IEEE ELECTRON DEVICE LETTERS
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.936-938
  • Anahtar Kelimeler: Photodetector, near-infrared (NIR), indium nitride, nanocrystals, INN, NANOWIRES
  • Marmara Üniversitesi Adresli: Evet

Özet

We present a proof-of-concept photodetector that is sensitive in the near-infrared (NIR) range based on InN nanocrystals. Indium nitride nanocrystals (InN-NCs) are obtained through laser ablation of a high pressure chemical vapor deposition grown indium nitride thin film and are used as optically active absorption region. InN-NCs are sandwiched between thin insulating films to reduce the electrical leakage current. Under -1 V applied bias, the recorded photoresponsivity values within 600-1100-nm wavelength range are as high as 3.05 x 10(-2) mA/W. An ultrathin layer of nanocrystalline InN thin film is, therefore, a promising candidate for NIR detection in large area schemes.