A Near-Infrared Range Photodetector Based on Indium Nitride Nanocrystals Obtained Through Laser Ablation
IEEE ELECTRON DEVICE LETTERS, cilt.35, sa.9, ss.936-938, 2014 (SCI-Expanded, Scopus)
- Yayın Türü: Makale / Tam Makale
- Cilt numarası: 35 Sayı: 9
- Basım Tarihi: 2014
- Doi Numarası: 10.1109/led.2014.2336795
- Dergi Adı: IEEE ELECTRON DEVICE LETTERS
- Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
- Sayfa Sayıları: ss.936-938
- Anahtar Kelimeler: Photodetector, near-infrared (NIR), indium nitride, nanocrystals, INN, NANOWIRES
- Marmara Üniversitesi Adresli: Evet
Özet
We present a proof-of-concept photodetector that is sensitive in the near-infrared (NIR) range based on InN nanocrystals. Indium nitride nanocrystals (InN-NCs) are obtained through laser ablation of a high pressure chemical vapor deposition grown indium nitride thin film and are used as optically active absorption region. InN-NCs are sandwiched between thin insulating films to reduce the electrical leakage current. Under -1 V applied bias, the recorded photoresponsivity values within 600-1100-nm wavelength range are as high as 3.05 x 10(-2) mA/W. An ultrathin layer of nanocrystalline InN thin film is, therefore, a promising candidate for NIR detection in large area schemes.