Optical properties of InN grown on templates with controlled surface polarities
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, cilt.207, sa.10, ss.2351-2354, 2010 (SCI-Expanded)
- Yayın Türü: Makale / Tam Makale
- Cilt numarası: 207 Sayı: 10
- Basım Tarihi: 2010
- Doi Numarası: 10.1002/pssa.201026086
- Dergi Adı: PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
- Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
- Sayfa Sayıları: ss.2351-2354
- Marmara Üniversitesi Adresli: Hayır
Özet
The structural and optical properties of InN layers grown on GaN/sapphire templates with controlled Ga-/N-polar surfaces are investigated. Raman spectroscopy and XRD reciprocal space map analysis suggest that the InN layers were grown strain free with a high crystal quality. A line shape analysis of the A(1)(LO) Raman mode yields to a decreasing carrier concentration for the sample grown on Ga-polar substrate. Low temperature photoluminescence measurements exhibit a shift to lower energies of the luminescence maximum for the sample grown on Ga-polar GaN probably due to a reduced carrier concentration and thus, a decreased Burstein-Moss shift. Following this, we demonstrate that the use of polarity controlled GaN/sapphire substrates leads to unstrained layers with good structural and optical properties. (C) 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim