Akademik Veri Yönetim Sistemi
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, cilt.207, sa.10, ss.2351-2354, 2010 (SCI-Expanded)
The structural and optical properties of InN layers grown on GaN/sapphire templates with controlled Ga-/N-polar surfaces are investigated. Raman spectroscopy and XRD reciprocal space map analysis suggest that the InN layers were grown strain free with a high crystal quality. A line shape analysis of the A(1)(LO) Raman mode yields to a decreasing carrier concentration for the sample grown on Ga-polar substrate. Low temperature photoluminescence measurements exhibit a shift to lower energies of the luminescence maximum for the sample grown on Ga-polar GaN probably due to a reduced carrier concentration and thus, a decreased Burstein-Moss shift. Following this, we demonstrate that the use of polarity controlled GaN/sapphire substrates leads to unstrained layers with good structural and optical properties. (C) 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim