Results are reported on dual-band detectors based on a GaN/AlGaN structure operating in both the ultraviolet-midinfrared (UV-MIR) and ultraviolet-farinfrared (UV-FIR) regions. The UV detection is due to an interband process, while the MIR/FIR detection is from free carrier absorption in the emitter/contact followed by internal photoemission over the barrier at the GaN/AlGaN interface. The UV detection, which was observed from 300 K to 4.2 K, has a threshold of 360 mn with a peak responsivity of 0.6 mA/W at 300 K. The detector shows a free carrier IR response in the 3-7 mu m range up to 120 K, and an impurity response around 54 mu m up to 30 K. A response in the range 7-13 mu m, which is tentatively assigned to transitions from C impurities and N vacancies in the barrier region, was also observed. It should also be possible to develop a detector operating in the UV-visible-IR regions by choosing the appropriate material system. A dual-band detector design, which allows not only to measure the two components of the photocurrent generated by UV and IR radiation simultaneously but also to optimize the UV and IR responses independently, is proposed. (c) 2006 Elsevier B.V. All rights reserved.