The influence of the group V/III molar precursor ratio on the structural properties of InGaN layers grown by HPCVD

DURKAYA G., BUEGLER M., ATALAY R., Senevirathna I., ALEVLİ M., HİTZEMANN O., ...Daha Fazla

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, cilt.207, sa.6, ss.1379-1382, 2010 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 207 Sayı: 6
  • Basım Tarihi: 2010
  • Doi Numarası: 10.1002/pssa.200983622
  • Dergi Adı: PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.1379-1382
  • Anahtar Kelimeler: InGaN, HPCVD, atomic force microscopy, infrared reflectance spectroscopy, free carrier concentration, QUANTUM-WELL-STRUCTURE
  • Marmara Üniversitesi Adresli: Hayır

Özet

The influence of the group V/III molar precursor ratio on the surface morphological and electrical properties of In(0.65)Ga(0.35)N epilayers has been investigated. The layers studied have been grown by high-pressure chemical vapor deposition, a growth technique that utilizes the reactor pressure as an additional processing parameter. The surface morphology analysis revealed that with the increasing V/III molar precursor ratio, the surface morphology degrades with increasing surface roughness and decreasing average grain areas. The free carrier concentration in the In0.65Ga0.35N epilayers increased with the increased group V/III molar precursor ratios in the 700-3000 range. (C) 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim