The influence of the group V/III molar precursor ratio on the structural properties of InGaN layers grown by HPCVD
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, cilt.207, sa.6, ss.1379-1382, 2010 (SCI-Expanded, Scopus)
- Yayın Türü: Makale / Tam Makale
- Cilt numarası: 207 Sayı: 6
- Basım Tarihi: 2010
- Doi Numarası: 10.1002/pssa.200983622
- Dergi Adı: PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
- Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
- Sayfa Sayıları: ss.1379-1382
- Anahtar Kelimeler: InGaN, HPCVD, atomic force microscopy, infrared reflectance spectroscopy, free carrier concentration, QUANTUM-WELL-STRUCTURE
- Marmara Üniversitesi Adresli: Hayır
Özet
The influence of the group V/III molar precursor ratio on the surface morphological and electrical properties of In(0.65)Ga(0.35)N epilayers has been investigated. The layers studied have been grown by high-pressure chemical vapor deposition, a growth technique that utilizes the reactor pressure as an additional processing parameter. The surface morphology analysis revealed that with the increasing V/III molar precursor ratio, the surface morphology degrades with increasing surface roughness and decreasing average grain areas. The free carrier concentration in the In0.65Ga0.35N epilayers increased with the increased group V/III molar precursor ratios in the 700-3000 range. (C) 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim