The influence of the group V/III molar precursor ratio on the structural properties of InGaN layers grown by HPCVD

DURKAYA G., BUEGLER M., ATALAY R., Senevirathna I., ALEVLİ M., HİTZEMANN O., ...More

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, vol.207, no.6, pp.1379-1382, 2010 (SCI-Expanded) identifier identifier

  • Publication Type: Article / Article
  • Volume: 207 Issue: 6
  • Publication Date: 2010
  • Doi Number: 10.1002/pssa.200983622
  • Journal Name: PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Page Numbers: pp.1379-1382
  • Keywords: InGaN, HPCVD, atomic force microscopy, infrared reflectance spectroscopy, free carrier concentration, QUANTUM-WELL-STRUCTURE
  • Marmara University Affiliated: No

Abstract

The influence of the group V/III molar precursor ratio on the surface morphological and electrical properties of In(0.65)Ga(0.35)N epilayers has been investigated. The layers studied have been grown by high-pressure chemical vapor deposition, a growth technique that utilizes the reactor pressure as an additional processing parameter. The surface morphology analysis revealed that with the increasing V/III molar precursor ratio, the surface morphology degrades with increasing surface roughness and decreasing average grain areas. The free carrier concentration in the In0.65Ga0.35N epilayers increased with the increased group V/III molar precursor ratios in the 700-3000 range. (C) 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim