Enhancement of polycrystalline silicon solar cells efficiency using indium nitride particles
JOURNAL OF OPTICS, cilt.17, sa.10, 2015 (SCI-Expanded, Scopus)
- Yayın Türü: Makale / Tam Makale
- Cilt numarası: 17 Sayı: 10
- Basım Tarihi: 2015
- Doi Numarası: 10.1088/2040-8978/17/10/105903
- Dergi Adı: JOURNAL OF OPTICS
- Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
- Anahtar Kelimeler: particles, solar cell, enhancement, external quantum efficiency, internal quantum efficiency, efficiency, indium nitride, POROUS-SILICON, LASER-ABLATION, INN, PRESSURE, NANOCRYSTALS
- Marmara Üniversitesi Adresli: Evet
Özet
In this work, we present a hybrid indium nitride particle/polycrystalline silicon solar cell based on 230 nm size indium nitride particles (InN-Ps) obtained through laser ablation. The solar cell performance measurements indicate that there is an absolute 1.5% increase (Delta eta) in the overall solar cell efficiency due to the presence of InN-Ps. Within the spectral range 300-1100 nm, improvements of up to 8.26% are observed in the external quantum efficiency (EQE) and increases of up to 8.75% are observed in the internal quantum efficiency (IQE) values of the corresponding solar cell. The enhancement in power performance is due to the down-shifting properties of the InN-Ps. The electrical measurements are supplemented by TEM, Raman, UV/VIS and PL spectroscopy of the InN-Ps.