Metrikler
Yayın
56
Açık Erişim
3
BM Sürdürülebilir Kalkınma Amaçları
Eğitim Bilgileri
2004 - 2008
2004 - 2008Doktora
Georgia State University, Physics & Astronomy, Amerika Birleşik Devletleri
2001 - 2004
2001 - 2004Yüksek Lisans
Georgia State University, Physics&Astronomy, Amerika Birleşik Devletleri
1998 - 2001
1998 - 2001Yüksek Lisans
Marmara Üniversitesi, Fen Bilimleri Enstitüsü, Fizik (Yl) (Tezli), Türkiye
1994 - 1998
1994 - 1998Lisans
Marmara Üniversitesi, Fen - Edebiyat Fakültesi, Fizik Bölümü, Türkiye
Yaptığı Tezler
2005
2005Doktora
Growth and characterization of indium nitride layers grown by high-pressure chemical vapor deposition
Georgia State University, Physics & Astronomy
2001
2001Yüksek Lisans
Titanyum atomunun toplam ve kısmi fotoiyonlaşma tesir kesiti hesapları
Marmara Üniversitesi, Fen Bilimleri Enstitüsü, Fizik (Yl) (Tezli)
2001
2001Yüksek Lisans
Cut off wavelength dependence on doping concentration for highly doped p-type GaAs detector structures
Georgia State University, Physics&Astronomy
Araştırma Alanları
Baskı Devreler, İnce Film, Kalın Film ve Hibrid Tümleşik Devreler
Dönüştürücüler ve Algılama Aygıtları
Nanoteknoloji
Optik ve Fotonik
Aydınlatma Teknolojisi
Yenilenebilir Enerji
Dielektrik Malzeme ve Aygıtlar
Optik Malzeme ve Aygıtlar
Optoelektronik Malzeme ve Aygıtlar
Yarı İletken Malzeme ve Aygıtlar
Güneş Enerjisi
Fizik
Atomik Özellikler ve Fotonla Etkileşmeler
Moleküler Özellikler ve Fotonla Etkileşmeler
Disiplinlerarası Fizik ve İlgili Bilim ve Teknoloji Alanları
Optik
Yoğun Madde 1:Yapısal, Mekanik ve Termal Özellikler
Akademik Ünvanlar / Görevler
2019 - Devam Ediyor
2019 - Devam EdiyorProf. Dr.
Marmara Üniversitesi, Fen - Edebiyat Fakültesi, Fizik Bölümü
2013 - 2019
2013 - 2019Doç. Dr.
Marmara Üniversitesi, Fen - Edebiyat Fakültesi
2011 - 2013
2011 - 2013Yrd. Doç. Dr.
Marmara Üniversitesi, Fen - Edebiyat Fakültesi, Fizik Bölümü
2010 - 2011
2010 - 2011Uzman
İhsan Doğramacı Bilkent Üniversitesi, Ulusal Nanoteknoloji Uygulama Ve Araştırma Merkezi
2010 - 2010
2010 - 2010Öğretim Görevlisi Dr.
University of Nevada, Las Vegas, Harry Reid Center For Enviromental Studies
2008 - 2010
2008 - 2010Öğretim Görevlisi
Georgia State University, College Of Arts And Sciences, Physics And Astronomy
2001 - 2008
2001 - 2008Araştırma Görevlisi
Georgia State University, College Of Arts & Sciences, Physics & Astronomy
1998 - 2001
1998 - 2001Araştırma Görevlisi
Marmara Üniversitesi, Fen - Edebiyat Fakültesi, Fizik Bölümü
Yönetimsel Görevler
2011 - Devam Ediyor
2011 - Devam EdiyorErasmus Programı Kurum Koordinatörü
Marmara Üniversitesi, Fen Bilimleri Enstitüsü, Fizik (Yl) (Tezli) (İngilizce)
Yönetilen Tezler
2019
2019Doktora
Optical Properties of Group III Nitride Thin films grown by hollow cathode plasma assisted atomic layer deposition
Alevli M. (Danışman)
N.Güngör(Öğrenci)
2019
2019Doktora
Optical properties of group III-nitride thin films grown by hollow cathode plasma assisted atomic layer deposition
ALEVLİ M. (Danışman)
N.Güngör(Öğrenci)
2013
2013Yüksek Lisans
Plazma ile etkilendirilmiş atomik katman büyütme yöntemi ile büyütülen AlN ince filmlerin optik özellikleri
ALEVLİ M. (Danışman)
N.GÜNGÖR(Öğrenci)
Makaleler
Tümü (37)
SCI-E, SSCI, AHCI (37)
SCI-E, SSCI, AHCI, ESCI (37)
Scopus (37)
2025
20251. Effect of Al3+ ion on the electrochromic and optical properties of TiO2 ultra-thin film
Uysal D., Mak A. K., ALEVLİ M., Öztürk O.
Journal of Alloys and Compounds
, cilt.1041, 2025 (SCI-Expanded)
2025
20252. Structural, optical, and electrochromic properties of Nb-doped WO3 thin films
Mak A. K., Uysal D., ALEVLİ M., Karabulut M., Öztürk O., Tuna Ö.
Journal of Alloys and Compounds
, cilt.1031, 2025 (SCI-Expanded, Scopus)
2024
20243. Incorporation Mechanism of Potassium in FAPbI3 Perovskite Solar Cell Materials
ALEVLİ M., Gungor N., KAVAK P., ŞAHİN N., Corcor A., Topal I., et al.
Journal of Physical Chemistry C
, cilt.128, sa.7, ss.2759-2766, 2024 (SCI-Expanded)
2022
20224. Oxygen incorporation in AlN films grown by plasma-enhanced atomic layer deposition
Gungor N., ALEVLİ M.
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A
, cilt.40, sa.2, 2022 (SCI-Expanded)
2020
20205. Effect of N-2/H-2 plasma on the growth of InN thin films on sapphire by hollow-cathode plasma-assisted atomic layer deposition
ALEVLİ M., Gungor N.
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A
, cilt.38, sa.6, 2020 (SCI-Expanded)
2019
20196. Visible/infrared refractive index and phonon properties of GaN films grown on sapphire by hollow-cathode plasma-assisted atomic layer deposition
Gungor N., ALEVLİ M.
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
, cilt.37, sa.5, 2019 (SCI-Expanded)
2018
20187. Role of film thickness on the structural and optical properties of GaN on Si (100) grown by hollow-cathode plasma-assisted atomic layer deposition
Gungor N., ALEVLİ M.
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A
, cilt.36, sa.2, 2018 (SCI-Expanded)
2018
20188. Influence of N-2/H-2 and N-2 plasma on binary III-nitride films prepared by hollow-cathode plasma-assisted atomic layer deposition
ALEVLİ M., Gungor N.
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A
, cilt.36, sa.1, 2018 (SCI-Expanded, Scopus)
2016
20169. Enhancement in c-Si solar cells using 16 nm InN nanoparticles
Chowdhury F. I., Alnuaimi A., Alkis S., ORTAÇ B., Akturk S., ALEVLİ M., et al.
MATERIALS RESEARCH EXPRESS
, cilt.3, sa.5, 2016 (SCI-Expanded)
2016
201610. Substrate temperature influence on the properties of GaN thin films grown by hollow-cathode plasma-assisted atomic layer deposition
ALEVLİ M., Gungor N., Haider A., Kizir S., Leghari S. A., BIYIKLI N.
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A
, cilt.34, sa.1, 2016 (SCI-Expanded)
2016
201611. Comparison of trimethylgallium and triethylgallium as "Ga" source materials for the growth of ultrathin GaN films on Si (100) substrates via hollow-cathode plasma-assisted atomic layer deposition
ALEVLİ M., Haider A., Kizir S., Leghari S. A., BIYIKLI N.
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A
, cilt.34, sa.1, 2016 (SCI-Expanded)
2015
201512. Enhancement of polycrystalline silicon solar cells efficiency using indium nitride particles
Alkis S., Chowdhury F. I., ALEVLİ M., Dietz N., Yalizay B., Akturk S., et al.
JOURNAL OF OPTICS
, cilt.17, sa.10, 2015 (SCI-Expanded, Scopus)
2014
201413. A Near-Infrared Range Photodetector Based on Indium Nitride Nanocrystals Obtained Through Laser Ablation
Tekcan B., Alkis S., ALEVLİ M., Dietz N., ORTAÇ B., BIYIKLI N., et al.
IEEE ELECTRON DEVICE LETTERS
, cilt.35, sa.9, ss.936-938, 2014 (SCI-Expanded)
2014
201414. Enhanced memory effect via quantum confinement in 16nm InN nanoparticles embedded in ZnO charge trapping layer
El-Atab N., Cimen F., Alkis S., Orta B., ALEVLİ M., Dietz N., et al.
APPLIED PHYSICS LETTERS
, cilt.104, sa.25, 2014 (SCI-Expanded)
2013
201315. Thermal stability of InN epilayers grown by high pressure chemical vapor deposition
Acharya A. R., Gamage S., Senevirathna M. K. I., ALEVLİ M., Bahadir K., Melton A. G., et al.
APPLIED SURFACE SCIENCE
, cilt.268, ss.1-5, 2013 (SCI-Expanded)
2012
201216. Generation of InN nanocrystals in organic solution through laser ablation of high pressure chemical vapor deposition-grown InN thin film
Alkis S., ALEVLİ M., Burzhuev S., Vural H. A., OKYAY A. K., ORTAÇ B.
JOURNAL OF NANOPARTICLE RESEARCH
, cilt.14, sa.8, 2012 (SCI-Expanded)
2012
201217. Optical properties of AlN thin films grown by plasma enhanced atomic layer deposition
Alevli M., Ozgit C., Donmez I., BIYIKLI N.
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A
, cilt.30, sa.2, 2012 (SCI-Expanded)
2012
201218. Structural properties of AlN films deposited by plasma-enhanced atomic layer deposition at different growth temperatures
Alevli M., Ozgit C., Donmez I., Biyikli N.
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
, cilt.209, ss.266-271, 2012 (SCI-Expanded)
2012
201219. Self-limiting low-temperature growth of crystalline AlN thin films by plasma-enhanced atomic layer deposition
Ozgit C., Donmez I., ALEVLİ M., BIYIKLI N.
THIN SOLID FILMS
, cilt.520, sa.7, ss.2750-2755, 2012 (SCI-Expanded)
2012
201220. Atomic layer deposition of GaN at low temperatures
Ozgit C., Donmez I., ALEVLİ M., BIYIKLI N.
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A
, cilt.30, sa.1, 2012 (SCI-Expanded)
2011
201121. The Influence of Growth Temperature on the Properties of AlN Films Grown by Atomic Layer Deposition
ALEVLİ M., Ozgit C., Donmez i.
ACTA PHYSICA POLONICA A
, cilt.120, 2011 (SCI-Expanded, Scopus)
2011
201122. The influence of N-2/H-2 and ammonia N source materials on optical and structural properties of AlN films grown by plasma enhanced atomic layer deposition
ALEVLİ M., Ozgit C., Donmez I., BIYIKLI N.
JOURNAL OF CRYSTAL GROWTH
, cilt.335, sa.1, ss.51-57, 2011 (SCI-Expanded)
2010
201023. Optical properties of InN grown on templates with controlled surface polarities
Kirste R., Wagner M., Schulze J., Strittmatter A., Collazo R., Sitar Z., et al.
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
, cilt.207, sa.10, ss.2351-2354, 2010 (SCI-Expanded)
2010
201024. The influence of the group V/III molar precursor ratio on the structural properties of InGaN layers grown by HPCVD
DURKAYA G., BUEGLER M., ATALAY R., Senevirathna I., ALEVLİ M., HİTZEMANN O., et al.
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
, cilt.207, sa.6, ss.1379-1382, 2010 (SCI-Expanded)
2008
200825. Optical characterization of InN layers grown by high-pressure chemical vapor deposition
ALEVLİ M., ATALAY R., DURKAYA G., Weesekara A., Perera A. G. U., Dietz N., et al.
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A
, cilt.26, sa.4, ss.1023-1026, 2008 (SCI-Expanded)
2008
200826. Desorption of hydrogen from InN(000(1)over-bar) observed by HREELS
Bhatta R., Thoms B. D., ALEVLİ M., Dietz N.
SURFACE SCIENCE
, cilt.602, sa.7, ss.1428-1432, 2008 (SCI-Expanded, Scopus)
2008
200827. The influence of substrate polarity on the structural quality of InN layers grown by high-pressure chemical vapor deposition
Dietz N., ALEVLİ M., ATALAY R., DURKAYA G., Collazo R., Tweedie J., et al.
APPLIED PHYSICS LETTERS
, cilt.92, sa.4, 2008 (SCI-Expanded)
2007
200728. Surface electron accumulation in indium nitride layers grown by high pressure chemical vapor deposition
Bhatta R., Thoms B., ALEVLİ M., Dietz N.
SURFACE SCIENCE
, cilt.601, sa.19, 2007 (SCI-Expanded)
2007
200729. Carrier concentration and surface electron accumulation in indium nitride layers grown by high pressure chemical vapor deposition
Bhatta R. P., Thoms B. D., Weerasekera A., Perera A. G., ALEVLİ M., Dietz N.
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A
, cilt.25, sa.4, ss.967-970, 2007 (SCI-Expanded)
2007
200730. Performance improvements of ultraviolet/infrared dual-band detectors
Perera A., Ariyawansa G., Rinzan M., Stevens M., ALEVLİ M., Dietz N., et al.
INFRARED PHYSICS & TECHNOLOGY
, cilt.50, ss.142-148, 2007 (SCI-Expanded)
2006
200631. Characterization of InN layers grown by high-pressure chemical vapor deposition
ALEVLİ M., DURKAYA G., Weerasekara A., Perera A. G. U., Dietz N., Fenwick W., et al.
APPLIED PHYSICS LETTERS
, cilt.89, sa.11, 2006 (SCI-Expanded)
2006
200632. GaN/AlGaN ultraviolet/infrared dual-band detector
Ariyawansa G., Rinzan M. B., ALEVLİ M., Strassburg M., Dietz N., Perera A. G. U., et al.
APPLIED PHYSICS LETTERS
, cilt.89, sa.9, 2006 (SCI-Expanded)
2006
200633. Surface structure, composition, and polarity of indium nitride grown by high-pressure chemical vapor deposition
Bhatta R. P., Thoms B. D., ALEVLİ M., Woods V., Dietz N.
APPLIED PHYSICS LETTERS
, cilt.88, sa.12, 2006 (SCI-Expanded)
2006
200634. The Fermi level dependence of the optical and magnetic properties of Ga1-xMnxN grown by metal-organic chemical vapour deposition
Strassburg M., Kane M., Asghar A., Song Q., Zhang Z. J., Senawiratne J., et al.
JOURNAL OF PHYSICS-CONDENSED MATTER
, cilt.18, sa.9, ss.2615-2622, 2006 (SCI-Expanded)
2005
200535. The characterization of InN growth under high-pressure CVD conditions
Dietz N., ALEVLİ M., Woods V., Strassburg M., Kang H., Ferguson I.
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS
, cilt.242, sa.15, ss.2985-2994, 2005 (SCI-Expanded, Scopus)
2003
200336. The effects of light heavy hole transitions on the cutoff wavelengths of far infrared detectors
Perera A. G. U., Matsik S. G., Rinzan M. B., Weerasekara A., ALEVLİ M., Liu H., et al.
Infrared Physics
, cilt.44, ss.347-353, 2003 (SCI-Expanded, Scopus)
2002
200237. Equation of state of alkane and alkylbenzene liquids: A test of the group contributions of scaling parameters for physical and chemical mixtures
Yahsi U., Kuzeci S., Alevli M.
INTERNATIONAL JOURNAL OF THERMOPHYSICS
, cilt.23, sa.2, ss.501-512, 2002 (SCI-Expanded)
Hakemli Bilimsel Toplantılarda Yayımlanmış Bildiriler
2018
20181. Critical Layer Thickness of GaN Thin Films on sapphire grown by hollow-cathode plasma assisted tomic layer deposition
ALEVLİ M., Gungor N.
European Materials Research Society Spring 2018, Fransa, 18 - 22 Haziran 2018, (Özet Bildiri)
2017
20172. Optical properties of GaN and InN on quartz grown by hollow-cathode plasma-assisted atomic layer deposition
Gungor N., ALEVLİ M.
ICG Annual meeting, 22 - 25 Ekim 2017, (Özet Bildiri)
2016
20163. Critical Thickness on Optical Properties at UV VIS and Infrared Region of GaN Thin Films Grown by Hollow Cathode Assisted Atomic Layer Deposition
Gungor N., ALEVLİ M.
Fotonik 2016 /18. ulusal optik, Elektro Optik Fotonik Çalıştayı, Ankara, Türkiye, 23 Eylül 2016
2016
20164. THE ROLE OF THICKNESS ON INFRARED OPTICAL PROPERTIES OF GALLIUM NITRIDE THIN FILMS GROWN BY HOLLOW CATHODE PLASMA ASSITED ATOMIC LAYER DEPOSITION
Gungor N., ALEVLİ M., Kizir S., Haider A., BIYIKLI N.
Turkisk Physical Society 32nd International Physics Congress, Bodrum, Türkiye, 6 - 09 Eylül 2016
2016
20165. Influence of N2 H2 and N2 Plasma on Binary III Nitride Films Prepared by Hollow Cathode Plasma Assisted Atomic Layer Deposition
ALEVLİ M., Gungor N., Ozgit Akgun C., Haider A., Kızır S., BIYIKLI N.
The 16th International Conference on Atomic Layer Deposition, Dublin, İrlanda, 24 - 27 Temmuz 2016, (Özet Bildiri)
2016
20166. The Role of Film Thickness on the Visible UV and Infrared Optical Properties of GaN Films Grown By Hollow Cathode Plasma Assisted Atomic Layer Deposition
ALEVLİ M., Gungor N., Haider A., Kizir S., BIYIKLI N.
The 16th International Conference on Atomic Layer Deposition, Dublin, İrlanda, 24 - 27 Temmuz 2016, (Özet Bildiri)
2016
20167. Infrared dielectric functions phonon modes and band gap properties of plasma assisted ALD grown InxGa1 xN films
ALEVLİ M., Gungor N., Haider A., Kızır S., BIYIKLI N.
The 16th International Conference on Atomic Layer Deposition, Dublin, İrlanda, 24 - 27 Temmuz 2016
2016
20168. Effect of Substrate Temperature and Ga source Precursor on Growth and Material Properties of GaN Grown by Hollow Cathode Plasma Assisted Atomic Layer Deposition
Haider A., Kizir S., Deminskyi P., Tsymbalenko O., Leghari S. A., BIYIKLI N., et al.
36th IEEE International Conference on Electronics and Nanotechnology (ELNANO), Kyiv, Ukrayna, 19 - 21 Nisan 2016, ss.132-134, (Tam Metin Bildiri)
2015
20159. Comparison Studies of GaN Grown with Trimethylgallium and Triethylgallium for Optoelectronic Applications
ALEVLİ M., Heider A., Gungör N., Kizir S., Sabri A., OKYAY A. K., et al.
American vacuum Society 62 nd İnternational Meeting, San-Jose, Kostarika, 18 - 23 Ekim 2015, (Özet Bildiri)
2015
201510. Hollow Cathode Plasma Assisted Atomic Layer Deposition of Wurtzite InN and InxGa1 xN Thin Films with Low Impurity Content
Haider A., Kizir S., Ozgit Akgun C., Goldenberg E., ALEVLİ M., OKYAY A. K., et al.
American Vacuum Society 62nd international symposium, 18 - 23 Ekim 2015, (Özet Bildiri)
2015
201511. Substrate Temperature Influence on the Properties of GaN Thin Films Grown by Hollow cathode Plasma assisted Atomic Layer Deposition
ALEVLİ M., Güngör N., Ozgit Akgun C., Kızır S., Haider A., Leghari S., et al.
American Vacuum Society 15th Conference on Atomic Layer deposition, Portland, Amerika Birleşik Devletleri, 28 - 01 Haziran 2015, ss.370
2015
201512. Comparison of Trimethylgallium and Triethylgallium as Ga Source Materials for the Growth of Ultra thin GaN Films via Hollow cathode Plasma assisted ALD
ALEVLİ M., Güngör N., Özgit Akgün Ç., Haider A., Kizir S., Leghari S., et al.
American Vacuum Society, Portland, Amerika Birleşik Devletleri, 28 Haziran - 01 Temmuz 2015, (Özet Bildiri)
2015
201513. Enhanced Light Scattering with Energy Downshifting Using 16 nm Indium Nitride Nanoparticles for Improved Thin film a Si N i P Solar Cells
Chowdhury F. I., İslam K., Alkis S., ORTAÇ B., ALEVLİ M., Dietz N., et al.
227th Electro Chemical Society meeting, Chicago, Amerika Birleşik Devletleri, 24 - 28 Mayıs 2015, cilt.66, ss.9-16, (Tam Metin Bildiri)
2014
201414. Effect of reactor pressure on optical and electrical properties of InN films grown by high-pressure chemical vapor deposition
Alevli M., Gungor N., Alkis S., Ozgit-Akgun C., Donmez I., Okyay A. K., et al.
5th International Symposium on Growth of III-Nitrides (ISGN), Georgia, Amerika Birleşik Devletleri, 18 - 22 Mayıs 2014, cilt.12, ss.423-429, (Tam Metin Bildiri)
2009
200915. Growth temperature - Phase stability relation in In1-xGa xN epilayers grown by high-pressure CVD
Durkaya G., Alevli M., Buegler M., Atalay R., Gamage S., Kaiser M., et al.
2009 MRS Fall Meeting, Boston, MA, Amerika Birleşik Devletleri, 30 Kasım - 04 Aralık 2009, cilt.1202, ss.277-282, (Tam Metin Bildiri)
2009
200916. Optical and structural properties of InN grown by HPCVD
Buegler M., Alevli M., Atalay R., Durkaya G., Senevirathna I., Jamil M., et al.
9th International Conference on Solid State Lighting, San Diego, CA, Amerika Birleşik Devletleri, 3 - 05 Ağustos 2009, cilt.7422, (Tam Metin Bildiri)
2006
200617. Properties of InN layers grown by high pressure CVD
Alevli M., Durkaya G., Kirste R., Weesekara A., Perera U., Fenwick W., et al.
2006 MRS Fall Meeting, Boston, MA, Amerika Birleşik Devletleri, 27 Kasım - 01 Aralık 2006, cilt.955, ss.291-296, (Tam Metin Bildiri)
2005
200518. Properties of InN grown by high-pressure CVD
Alevli M., Durkaya G., Woods V., Haboeck U., Kang H., Senawiratne J., et al.
2005 Materials Research Society Fall Meeting, Boston, MA, Amerika Birleşik Devletleri, 28 Kasım - 02 Aralık 2005, cilt.892, ss.77-82, (Tam Metin Bildiri)
2005
200519. The growth of InN and related alloys by high-pressure CVD
Dietz N., Alevli M., Kang H., Straßburg M., Woods V., Ferguson I. T., et al.
Operational Characteristics and Crystal Growth of Nonlinear Optical Materials II, San Diego, CA, Amerika Birleşik Devletleri, 31 Temmuz - 01 Ağustos 2005, cilt.5912, ss.1-8, (Tam Metin Bildiri)
Desteklenen Projeler
2014 - 2015
2014 - 2015Atomik Katman Büyütme Yöntemi Ile Kaplanan GaN Galyum Nitrat Ince Filmlerinin Optik Karakterizasyonu
TÜBİTAK Projesi , 3001 - Başlangıç Ar-Ge Projeleri Destekleme Programı
Alevli M. (Yürütücü)