DURKAYA, G. Et Al. 2010. The influence of the group V/III molar precursor ratio on the structural properties of InGaN layers grown by HPCVD. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE , vol.207, no.6 , 1379-1382.

DURKAYA, G., BUEGLER, M., ATALAY, R., Senevirathna, I., ALEVLİ, M., HİTZEMANN, O., ... KAİSER, M.(2010). The influence of the group V/III molar precursor ratio on the structural properties of InGaN layers grown by HPCVD. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE , vol.207, no.6, 1379-1382.

DURKAYA, GÖKSEL Et Al. "The influence of the group V/III molar precursor ratio on the structural properties of InGaN layers grown by HPCVD," PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE , vol.207, no.6, 1379-1382, 2010

DURKAYA, GÖKSEL Et Al. "The influence of the group V/III molar precursor ratio on the structural properties of InGaN layers grown by HPCVD." PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE , vol.207, no.6, pp.1379-1382, 2010

DURKAYA, G. Et Al. (2010) . "The influence of the group V/III molar precursor ratio on the structural properties of InGaN layers grown by HPCVD." PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE , vol.207, no.6, pp.1379-1382.

@article{article, author={GÖKSEL DURKAYA Et Al. }, title={The influence of the group V/III molar precursor ratio on the structural properties of InGaN layers grown by HPCVD}, journal={PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE}, year=2010, pages={1379-1382} }