Direct Transfer Manufacturing of Flexible Silicon Carbide Nanowire-Network Prototype Device

Onder M. S., TEKER K.

NANO HYBRIDS AND COMPOSITES, cilt.37, ss.49-58, 2022 (ESCI) identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 37
  • Basım Tarihi: 2022
  • Doi Numarası: 10.4028/p-d0o9il
  • Dergi Adı: NANO HYBRIDS AND COMPOSITES
  • Derginin Tarandığı İndeksler: Emerging Sources Citation Index (ESCI), INSPEC
  • Sayfa Sayıları: ss.49-58
  • Anahtar Kelimeler: Flexible electronics, SiCNW-network, Wearable photonic applications, Direct transfer method, ULTRAVIOLET PHOTODETECTOR, FABRICATION, ELECTRODES, COATINGS
  • Marmara Üniversitesi Adresli: Evet

Özet

Flexible and transparent devices are expected to meet increasing consumer demands for upgrades in wearable devices, smart electronic and photonic applications. In this work, nanomanufacturing of a flexible and powerless silicon carbide nanowire network ultraviolet photodetector (SiCNW-network UVPD) prototype was investigated by a very cost-effective direct transfer method. Indeed, the powerless device exhibited a photo-to-dark current ratio (PDCR) of 15 with a responsivity of 5.92 mA/W at 254 nm wavelength exposure. The reliability and durability of the device was evaluated by bending tests. In fact, the PDCR of the device was still very good even after seventy-five bending cycles (similar to 96 % of the rest state). In brief, our flexible, powerless SiCNW-network UVPD device with cost-effectiveness, good performance, and durability can provide feasible alternatives for new generation wearable optoelectronic products.