Akademik Veri Yönetim Sistemi
Optics and Laser Technology, cilt.170, 2024 (SCI-Expanded)
Efficient photoinduced modulation of conductance for nanoscale optical sensing devices has vital significance for the progression of new generation optoelectronic device applications. We have systematically investigated photoinduced polarity shift of in-situ nitrogen-doped silicon carbide nanowire phototransistors (SiCNW-PT) upon exposure to UV light illuminations with wavelengths of 365 nm, 302 nm, and 254 nm. All devices exhibited ambipolar transistor behavior under dark conditions and substantial photocurrent increases selectively to 254 nm UV light. Interestingly, the devices transformed into p-dominant phototransistors under 254 nm UV illumination showing a very strong gating effect with the maximum to minimum current ratio (Imax/Imin) of 4783.8 under 254 nm UV exposure at a gate voltage of −10 V. In fact, our devices showed about three orders of magnitude higher gating effect in comparison to the previous studies. Consequently, our cost-effective fabrication approach along with good performance of the SiCNW phototransistors could offer new solutions for future nanoscale UV tunable sensing and communication devices for a wide range of optoelectronic applications.