Gallium nitride nanowire devices and photoelectric properties

Teker K.

SENSORS AND ACTUATORS A-PHYSICAL, cilt.216, ss.142-146, 2014 (SCI İndekslerine Giren Dergi) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 216
  • Basım Tarihi: 2014
  • Doi Numarası: 10.1016/j.sna.2014.05.028
  • Sayfa Sayıları: ss.142-146


This paper presents an investigation of photoelectric properties of the CVD-grown multi-prong GaN nanowires. The multi-prong growth mechanism produces uniform high density long GaN nanowires, which is very significant for scale-up manufacturing opportunities. Photoelectric studies of the GaN nanowires have been conducted at various light sources with wavelengths of 254 nm and 365 nm. The 254 nm-light exposure resulted in a larger photocurrent increase compared to that of 365 nm-light exposure, which is attributed to the larger number of the photogenerated carriers owing to the higher photon energy. The positive photoelectric response of the GaN nanowires is attributed to the molecular sensitization mechanism. Furthermore, the GaN nanowires devices exhibited moderate persistent photocurrent. These findings suggest a reduced surface recombination process due to the depletion surface charge layer. In summary, the multi-prong GaN nanowires could be utilized as photoconductors, photodetectors, and various photosensing elements in many highly integrated optoelectronic devices. (C) 2014 Elsevier B.V. All rights reserved.