Bridged oxide nanowire device fabrication using single step metal catalyst free thermal evaporation

COŞKUN M., Ombaba M. M., DUMLUDAĞ F., ALTINDAL A., Islam M. S.

RSC ADVANCES, cilt.8, sa.19, ss.10294-10301, 2018 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 8 Sayı: 19
  • Basım Tarihi: 2018
  • Doi Numarası: 10.1039/c7ra11987a
  • Dergi Adı: RSC ADVANCES
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.10294-10301
  • Marmara Üniversitesi Adresli: Evet

Özet

In this study, indium-tin-zinc-oxide (ITZO) and Zn doped In2O3 nanowires were directly grown as bridged nanowires between two heavily doped silicon (Si) electrodes on an SOI wafer using single step vapor-solid-solid (VSS) growth method. SEM analysis showed highly dense and self aligned nanowire formation between the Si electrodes. Electrical and UV response measurements were performed in ambient condition. Current-voltage characteristics of devices exhibited both linear and non-linear behavior. This was the first demonstration of bridged ITZO and Zn-doped In2O3 nanowires. Our results show that bridged nanowire growth technique can be a potential candidate for high performance electronic and optoelectronic devices.