Multi-quantum well design parameter variation in InP-based VCSEL


Kumarajah K., Menon P. S. , Ismail M., Yeop B. Y. , Shaari S.

8th WSEAS International Conference on Microelectronics, Nanoelectronics, Optoelectronics, İstanbul, Türkiye, 30 Mayıs - 01 Haziran 2009, ss.115-116 identifier

  • Basıldığı Şehir: İstanbul
  • Basıldığı Ülke: Türkiye
  • Sayfa Sayısı: ss.115-116

Özet

We present the design parameter variations of multi quantum wells (MQW) in the active region of an InP-based vertical-cavity surface emitting laser (VCSEL) utilizing an air-post design, The MQW and barrier thickness were varied and their effect on the device threshold current, gain and lattice temperature were analysed and presented.