The impact of reactor neutrons on 6H-SiC followed by irradiation of 91.3 MeV Xe ions-defects studies using positron annihilation spectroscopy

Hazem R., Izerrouken M., Yener M. Y., TAV C., YAHŞİ U.

Physica Scripta, cilt.100, sa.8, 2025 (SCI-Expanded) identifier

  • Yayın Türü: Makale / Derleme
  • Cilt numarası: 100 Sayı: 8
  • Basım Tarihi: 2025
  • Doi Numarası: 10.1088/1402-4896/adf781
  • Dergi Adı: Physica Scripta
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus, Aerospace Database, Chemical Abstracts Core, Compendex, INSPEC, zbMATH
  • Anahtar Kelimeler: annealing, clustering, ion irradiation, neutron irradiation, positron annihilation spectroscopy, silicon carbide SiC
  • Marmara Üniversitesi Adresli: Evet

Özet

The positron annihilation spectroscopy (PAS) was used to study the defects in 6H-SiC single crystal generated only by the impact of reactor neutrons and, it followed by the irradiation of a 91.3 MeV Xe ion beam. After neutron irradiation, only silicon vacancy-related defects, as identified by the Doppler broadening, are created. Further positron lifetime-based analysis showed that these defects are mainly (VC-VSi) divacancy, (VC-VSi)3 and (VC-VSi)4 clusters. With the post irradiation of a 91.3 MeV Xe ion beam, the defects generated at high neutrons dose remained almost similar, indicating saturation of positron trapping. The results indicate two competing annihilation processes for silicon monovacancy VSi- pre-saturation, where the VSi is annealed by aggregation to form (VC-VSi)n vacancy clusters, and a saturation, where the VSi is annealed by recombination with interstitials.