Manipulating 3C-SiC nanowire morphology through gas flow dynamics


Teker K. , Otto J. M.

2011 MRS Fall Meeting, Boston, MA, United States Of America, 28 November - 02 December 2011, vol.1396, pp.237-242 identifier

  • Publication Type: Conference Paper / Full Text
  • Volume: 1396
  • Doi Number: 10.1557/opl.2012.87
  • City: Boston, MA
  • Country: United States Of America
  • Page Numbers: pp.237-242

Abstract

Creation of nanoscale building blocks with various sizes and shapes are critical for the progress of nanotechnology. Silicon carbide nanostructures attract interest due to their applications in optoelectronic devices, sensors, high-power/high temperature electronics, and thermoelectrics. This paper presents a detailed study of SiC nanowire morphology change through gas flow dynamics. SiC nanowire synthesis has been carried out by chemical vapor deposition using hexamethyldisilane (HMDS) as source material on SiO 2/Si substrate. The study has been limited to several catalyst materials, including nickel (nanoparticle and thin film), cobalt nanoparticles, and gold thin film. The growth runs have been carried out at 1000°C under H 2 as carrier gas with flow rates varying from 100 to 1000 seem. A significant change in morphology has been observed. At high flow rates, the nanowires are highly curved and contain sharp kinks, while the nanowires are straight and longer at lower flow rates. Moreover, it is important to note that the flow rate has influenced the nanowire growth-yield significantly. As small as 8nm-diameter SiC nanowire has been observed, as determined by transmission electron microscopy (TEM). These findings will help in controlling the morphology of the SiC nanowires. The fabricated nanowires have also been characterized by scanning electron microscopy (SEM), x-ray diffraction (XRD), and Fourier transform infrared spectroscopy (FTIR). © 2012 Materials Research Society.