Fabrication of ultraviolet photodetector with aluminum nitride nanowire networks via direct transfer method


Ali Y. A. , Teker K.

MICROELECTRONIC ENGINEERING, cilt.211, ss.26-28, 2019 (SCI İndekslerine Giren Dergi) identifier identifier

  • Cilt numarası: 211
  • Basım Tarihi: 2019
  • Doi Numarası: 10.1016/j.mee.2019.03.016
  • Dergi Adı: MICROELECTRONIC ENGINEERING
  • Sayfa Sayıları: ss.26-28

Özet

This paper presents the fabrication of an ultraviolet (UV) photodetector based on Aluminum nitride nanowire (AINNW) networks on a flexible polyvinyl chloride (PVC) substrate. The device was fabricated via a direct transfer method through a very low-cost non-lithographic fabrication scheme. The device has demonstrated very fast photoresponse rise and decay times of 0.27 s and 0.41 s to UV light illumination at 15 V, respectively. Moreover, the device exhibited a good photocurrent response at 2 V bias enabling very high sensitivity and capability of the AlNNW device operating at low voltages. Furthermore, the facile fabrication scheme is very cost-effective, readily scalable; and offers broad integration capabilities, with further optimization, in various flexible electronic and photonic applications.