Pure and zirconium-doped manganese(II,III) oxide: Investigations on structural and conduction-related properties within the Lattice Compatibility Theory scope


Ben Said L., Larbi T., Yumak A. , Boubaker K., Amlouk M.

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, cilt.40, ss.224-229, 2015 (SCI İndekslerine Giren Dergi) identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 40
  • Basım Tarihi: 2015
  • Doi Numarası: 10.1016/j.mssp.2015.06.034
  • Dergi Adı: MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
  • Sayfa Sayıları: ss.224-229

Özet

Manganese(II,III) oxide Mn3O4 thin films have been deposited on glass substrates using a simple spray pyrolysis method. Zirconium doping protocol was applied in order to verify some recently claimed enhancements of hausmannite physical properties. Gradual doping was achieved with ratio [Zr]/[Mn] = 1%, 2% and 3% in addition to pure Mn3O4. Beyond classical characterization techniques, effects of Zr-doping were studied in reference to the expected use in rechargeable batteries and sensing devices. Moreover, additional opto-thermal investigation and analyses of the Lattice Compatibility Theory led to a founded understanding to the dynamics of Zirconium ion incorporation inside Mn3O4 host matrices. (C) 2015 Elsevier Ltd. All rights reserved.