Understanding dispersive charge-transport in crystalline organic-semiconductors


YAVUZ İ., Lopez S. A.

PHYSICAL CHEMISTRY CHEMICAL PHYSICS, cilt.19, sa.1, ss.231-236, 2017 (SCI-Expanded) identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 19 Sayı: 1
  • Basım Tarihi: 2017
  • Doi Numarası: 10.1039/c6cp06431k
  • Dergi Adı: PHYSICAL CHEMISTRY CHEMICAL PHYSICS
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.231-236
  • Marmara Üniversitesi Adresli: Evet

Özet

The effect of short-range order and dispersivity on charge-transport for organic crystalline semiconductors are important and unresolved questions. This exploration is the first to discern the role of short-range order on charge-transport for crystalline organic semiconductors. A multimode computational approach (including Molecular Dynamics and kinetic Monte Carlo simulations) is employed to understand the hole mobility dispersivity of crystalline organic semiconductors. Crystalline organic solids feature a mesoscale region where dispersive charge-transport dominates; our calculations show a clear transition of charge-mobility from non-dispersive to dispersive. An empirical relationship between the dispersive and non-dispersive transport transition region and ideal simulation box thickness is put forth. The dispersive to non-dispersive transition region occurs when energetic disorder approaches 72 meV. Non-dispersive transport is observed for simulation box sizes greater than 3.7 nm, which corresponds to approximately 12 pi-stacked layers in typical p-stacked organic solids. A qualitative relationship is deduced between the variability of measured dispersive hole and variability of computed dispersive hole mobilities and system size. This relationship will guide future charge-transport investigations of condensed-phase organic systems.