Photoconductivity of GaN nanowires


Teker K. , Otto J., Siemann A.

Nanotechnology 2013: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational - 2013 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2013, Washington, Amerika Birleşik Devletleri, 12 - 16 Mayıs 2013, cilt.2, ss.60-63 identifier

  • Cilt numarası: 2
  • Basıldığı Şehir: Washington
  • Basıldığı Ülke: Amerika Birleşik Devletleri
  • Sayfa Sayıları: ss.60-63

Özet

Gallium nitride nanostructures continue to attract great interest due to their applications in optoelectronic devices (UV photodetectors, photosensors, and light-emitting devices), high-power/high temperature electronics, nanosensing, and piezoelectric nanogenerators. This paper presents photoconductivity investigation of the GaN nanowires. GaN nanowires have been synthesized by chemical vapor deposition using Ga and NH3 as source materials on SiO2/Si substrate at 1100°C under H2 as carrier gas. Nanowire FET devices have been fabricated. Photoconductivity studies of the GaN nanowires have been conducted at various light sources with wavelengths of 254 nm, 365 nm, 532 nm and 633 nm using a semiconductor parameter analyzer. The grown nanowires and devices have been characterized by SEM, XRD, and semiconductor parameter analyzer.