Analysis of a DAR IMPATT Diode for High Frequency Part of Millimetric Region


Zemliak A., Cabrera S.

8th WSEAS International Conference on Microelectronics, Nanoelectronics, Optoelectronics, İstanbul, Türkiye, 30 Mayıs - 01 Haziran 2009, ss.42-46 identifier

  • Yayın Türü: Bildiri / Tam Metin Bildiri
  • Basıldığı Şehir: İstanbul
  • Basıldığı Ülke: Türkiye
  • Sayfa Sayıları: ss.42-46

Özet

The analysis and optimization of the n(+)pvnp(+) avalanche diode structure that includes two avalanche regions have been realized on basis of the nonlinear model and special optimization procedure. The admittance characteristics of the DAR diode were analyzed in very wide frequency band from 30 up to 360 GHz and had been optimized for the third frequency band near the 300 GHz.