Low-Power-Operating 3C-SiC Ultraviolet Photodetector forElevated Temperature Applications


Teker K. , Mousa H.

JOURNAL OF ELECTRONIC MATERIALS, vol.49, no.6, pp.3813-3818, 2020 (Journal Indexed in SCI) identifier identifier

  • Publication Type: Article / Article
  • Volume: 49 Issue: 6
  • Publication Date: 2020
  • Doi Number: 10.1007/s11664-020-08097-8
  • Title of Journal : JOURNAL OF ELECTRONIC MATERIALS
  • Page Numbers: pp.3813-3818

Abstract

This work demonstrates the systematic investigation of the effects of high temperature on key performance parameters including speed, sensitivity, stability, and repeatability of a 3C-SiC/Si ultraviolet (UV) photodetector (PD) at various operating temperatures ranging from 50 degrees C to 200 degrees C. The device with very low dark current (similar to 0.08 pA) exhibited high sensitivity of 4466 and fast rise and decay times of 0.34 s and 0.30 s at 50 degrees C to exposure of 254 nm UV light at a bias voltage of 20 V. Additionally, the device showed very good performance at a low operating voltage of 0.5 V and high temperature of 200 degrees C, with a rise time of 2.68 s and decay time of 1.44 s, while maintaining good stability and repeatability. The slight decrease in performance (sensitivity from 4466 to 932) at 200 degrees C was attributed to the increase in lattice scattering at elevated temperatures, leading to a decrease in carrier mobility. Moreover, the device was fabricated using a very cost-effective process flow. Consequently, this study can contribute to the development of low-power, fast, highly sensitive, and cost-effective 3C-SiC UVPDs for use in high-temperature photonic applications.