Dielectrophoretic Assembly of Aluminum Nitride (AlN) Single Nanowire Deep Ultraviolet Photodetector

Teker K.

JOURNAL OF NANO RESEARCH, cilt.60, ss.86-93, 2019 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 60
  • Basım Tarihi: 2019
  • Doi Numarası: 10.4028/www.scientific.net/jnanor.60.86
  • Dergi Adı: JOURNAL OF NANO RESEARCH
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.86-93
  • Anahtar Kelimeler: Deep-UV photodetectors, Nanoscale UV-sensors, AlN nanowires, Low-voltage operation, STRUCTURAL METASTABILITY, QUANTUM-EFFICIENCY, SEMICONDUCTOR, NANOBELTS
  • Marmara Üniversitesi Adresli: Hayır

Özet

High UV-light sensitivity, fast response, and low power consumption are the most important features of nanowire-based devices for new applications in photodetectors, optical switches, and image sensors. Single AlN nanowire deep ultraviolet (UV) photodetector has been fabricated utilizing very high-quality AlN nanowires through a very practical dielectrophoretic assembly scheme. The low-voltage (<= 3 V) operating UV photodetector has selectively shown a high photocurrent response to the 254 nm UV light. Furthermore, the photocurrent transients have been modelled to determine the rise and decay time constants as 7.7 s and 11.5 s, respectively. In consequence, combination of deep UV light selectivity and low voltage operation make AlN nanowires great candidates for the development of compact deep UV photodetectors.