Akademik Veri Yönetim Sistemi
2020 Materials Research Society Fall Meeting, Massachusetts, Amerika Birleşik Devletleri, 28 Kasım - 04 Aralık 2020, ss.7-8
F.NM01.10.09 Late News: Fabrication of a Fine-Pattern Flexible Nanowire Photodetector by Shadow Mask
Abstract Body: Recently, ultraviolet photodetectors (UVPDs) have been used on large
scale applications such as environmental monitoring, flame detection, space
communication, biomedical applications, pharmaceutical, and chemical analysis.
Besides, advances in internet technologies such as the internet of things (IoT) endorse
the integration of sensors more rapidly in every aspect of our lives. This trend demands
the fabrication of smaller, lighter, less complicated, and low power devices. Therefore,
designing low cost, self-powered, highly sensitive, Óexible UVPD nanodevices are
becoming a hot research area for near future optoelectronics. Silicon carbide (SiC), a
wide bandgap semiconductor, is an excellent contender to fulfill those expectations. In
addition to having characteristics of one-dimensional nanostructure such as high
surface to volume ratio, high crystalline quality, SiC nanowires also possess superior
material attributes like high breakdown voltage, high thermal conductivity, high drift
velocity, excellent chemical and physical stability. In this study, we propose a very cost-effective, flexible,
self-powered single SiC nanowire ultraviolet photodetector (SiCNWUVPD) fabricated on a polyvinylchloride (PVC) substrate. The self-powered flexible
SiCNW-UVPD was fabricated via a commercially available transmission electron
microscopy (TEM) grid (physical mask) and a sputter coater system. Gold (Au)
electrodes of 110 µm x 110 µm and a gap of 4 µm were successfully achieved without
the use of complicated and expensive methods like photolithography. Two-probe
photocurrent-time (I-t) and I-V measurements were performed to reveal
photoresponse characteristics such as the photo-to-dark current ratio (PDCR),
sensitivity, and responsivity under 254 nm wavelength UV light at 0 V bias. A shallow
dark current around 0.087 pA and a good PDCR value of 18 are obtained. Moreover,
sensitivity and responsivity values are calculated as 1756 and 170 mA/W, respectively.
In addition, the specific detectivity calculations, the e×ect of bias, and vigorous bending
test results are discussed as well. Our work provides the following unique advantages:
(i) to the best of our knowledge, the first demonstration of a single SiC nanowire PD on
a flexible substrate with great performance, (ii) a very cost-e×ective fabrication method
and readily applicable to any substrate, (iii) exhibiting high sensitivity and responsivity
values under UV light at 0 V bias. Therefore, our SiCNW-UVPD device presents an
opportunity for low-cost, easy to fabricate, self-powered photodetectors for upcoming
future technologies such as wearable sensors, electronic skins, and the internet of
things.