Akademik Veri Yönetim Sistemi
2020 Materials Research Society Fall Meeting, Massachusetts, Amerika Birleşik Devletleri, 28 Kasım - 04 Aralık 2020, ss.4-5
F.SF01.09.04 Gallium Nitride Nanowire Field Effect Transistor for High Temperature Applications
Abstract Body: Wide bandgap (WBG) semiconductor-based electronics are becoming
the center of interest due to their ability to operate at high temperatures and high
voltages. Gallium Nitride (GaN), as one of the WBG semiconductors, is a strong
candidate that can meet expectations in high-temperature electronic applications such
as military systems, automotive and aerospace control units, gas and oil exploration
drilling systems. The superior physical properties of GaN nanowires such as high direct
bandgap, high breakdown voltage, and high thermal conductivity, as well as high
surface area to volume ratio, make it even more signiÒcant material for harsh
environments. In this work, we investigate the electrical transport properties of a backgated single GaN nanowire Òeld-e×ect transistor (GaNNW-FET) at elevated
temperatures. In order to analyze transport properties (IDS-VDS and IDS-VGS),
electrical measurements were performed at temperatures ranging from room
temperature to as high as 350°C. The device performs very well until 250°C, whereas it
shows some reduction in current values beyond 300°C. In fact, the drain current
increases by 2.1, 13.6 and 19.7 times at the temperatures of 100°C and 200°C, 250°C,
respectively, with respect to room temperature current at the same bias voltage of 1 V.
The enhancement of current is likely due to the reduction of contact resistance
between the nanowire and electrodes as well as an increase in thermally excited carrier
concentration. On the other hand, degradation of current is likely due to the increase in
lattice scattering, lowering the carrier mobility, of the GaN nanowire. Moreover, the
inÓuence of high temperature on important transport properties such as
transconductance, carrier concentration and carrier mobility will be presented in
details. The device o×ers the following unique advantages: (i) stable operation at high
temperatures (at 350°C), (ii) exhibiting an on/o× current ratio of 5.5 x 102 and a high
transconductance value of 3.09 µS at 350°C indicating a good gating e×ect even at high
temperatures, and iii) o×ering solutions not only for high-power but also for low-power
circuit and photonic applications at high temperature ambients (> 300oC). In summary,
GaNNW-FET proves to be an excellent device capable of operating at high
temperatures enabling the development of high-performance nanoelectronic/photonic
devices especially for harsh conditions.