Silicon carbide nanowire field effect transistors with high on/off current ratio

Uzun A., Teker K.

MICROELECTRONIC ENGINEERING, vol.205, pp.59-62, 2019 (SCI-Expanded) identifier identifier

  • Publication Type: Article / Article
  • Volume: 205
  • Publication Date: 2019
  • Doi Number: 10.1016/j.mee.2018.12.009
  • Journal Name: MICROELECTRONIC ENGINEERING
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Page Numbers: pp.59-62
  • Keywords: SiC-NWFETs, On/off current ratio, Gating effect, Transconductance
  • Marmara University Affiliated: No

Abstract

We report the important performance parameters of SiC-NWFET devices including on/off current ratio (I-on/I-off), gating effect, transconductance (g(m)), and carrier mobility (mu(h)). The channel length dependence of these key performance parameters of the SiC-NWFETs with varying channel lengths ranging from 120 nm to 1.5 mu m has been demonstrated. The device with the 120 nm channel length has led to a very high on/off current ratio (1.34 x 10(4)) and very strong gating effect. Furthermore, the transconductance and the hole mobility have been determined as 6.9 nS and 1.696 cm(2)/V.s, respectively, at V-ds of 0.05 V. This study shows good promise of the SiC-NWFET devices to be used in advanced solid-state nanoelectronic devices capable of operating at high frequency and high temperature.