Production of next generation InP-HBT epiwafers by MBE


Lubyshev D., Malis O., Teker K. , Wu Y., Fastenau J., Fang X., ...Daha Fazla

2003 International Conference Indium Phosphide and Related Materials, Santa Barbara, CA, Amerika Birleşik Devletleri, 12 - 16 Mayıs 2003, ss.385-388 identifier

  • Cilt numarası:
  • Basıldığı Şehir: Santa Barbara, CA
  • Basıldığı Ülke: Amerika Birleşik Devletleri
  • Sayfa Sayıları: ss.385-388

Özet

The current status of InP-based HBT epiwafer production using multi-wafer MBE systems at IQE Inc. is presented. Control and stability of critical material growth parameters demonstrate reproducible quality of standard InP/InGaAs/InAlAs HBT structures grown on 4-inch diameter substrates. Experimental data from HBTs grown on newly developed 6-inch substrates exhibit good material and device parameters. Development of next-generation structures, including GaAsSb-base and metamorphic HBTs, is also discussed.