Ag-metallization effects on optical and electrical properties of porous silicon

KAYAHAN E., Ceylan N., Esmer K.

APPLIED SURFACE SCIENCE, cilt.255, sa.5, ss.2808-2812, 2008 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 255 Sayı: 5
  • Basım Tarihi: 2008
  • Doi Numarası: 10.1016/j.apsusc.2008.08.012
  • Dergi Adı: APPLIED SURFACE SCIENCE
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.2808-2812
  • Anahtar Kelimeler: Porous silicon, Ag-assisted PS, Electrochemical etching, Electrical properties, Spectral response, PHOTOLUMINESCENCE, DISSOLUTION, COPPER, LAYERS
  • Marmara Üniversitesi Adresli: Hayır

Özet

In this study, the chemisorption of Ag atoms to the porous silicon (PS) surface was studied with premetallization and post-metallization processes. The photoluminescence (PL), Fourier transform infrared (FTIR) spectroscopy and electrical properties of the Ag/PS samples via different metallization processes were examined. The PL spectra show a shift towards the high energy region in both of the metallized samples. According to the FTIR results, the Ag atoms coordinate themselves with respect to Si atoms on the surface through the oxygen and hydrogen atoms.