Fourier transform infrared spectroscopy of silicon carbide nanowires

Teker K. , Abdurazik D.

10th Annual TechConnect World Innovation Conference and Expo, Held Jointly with the 19th Annual Nanotech Conference and Expo, and the 2016 National SBIR/STTR Conference, Washington, Amerika Birleşik Devletleri, 22 - 25 Mayıs 2016, cilt.4, ss.51-54 identifier

  • Yayın Türü: Bildiri / Tam Metin Bildiri
  • Cilt numarası: 4
  • Basıldığı Şehir: Washington
  • Basıldığı Ülke: Amerika Birleşik Devletleri
  • Sayfa Sayıları: ss.51-54


Silicon carbide (SiC) nanowires have been grown on by hexamethyldisilane (HMDS) using iron and nickel catalysts at temperatures between 900 and 1100°C under H2. The morphologies and bonding states were investigated by scanning electron microscopy (SEM) and Fourier transform infrared spectroscopy (FTIR). The results show that the assynthesized nanowires are high-quality crystals with high aspect ratios. Moreover, high density of SiC nanowires have been successfully grown even at a low temperature of 900°C. Additionally, it has been observed that the phonon states of SiC nanowires are different from the bulk SiC. The SiC TO mode shifted to lower wavenumber compared to bulk SiC. Furthermore, the FWHM value of the TO mode absorption of the SiC nanowires is only 13cm-1, which is lower than that of bulk SiC (59cm-1). The sharp and consistent TO modes indicate very good bonding uniformity of the SiC nanowires.