Characteristics of Ba-Doped PbS Thin Films Prepared by the SILAR Method


Gulen Y.

ACTA PHYSICA POLONICA A, vol.126, no.3, pp.763-767, 2014 (Journal Indexed in SCI) identifier

  • Publication Type: Article / Article
  • Volume: 126 Issue: 3
  • Publication Date: 2014
  • Title of Journal : ACTA PHYSICA POLONICA A
  • Page Numbers: pp.763-767

Abstract

In this material production research, undoped and Ba-doped nanostructured PbS films are fabricated on glass surfaces by SILAR method. The structural, optical and morphological properties of the films are examined via scanning electron microscopy, UV-vis spectrophotometry and X-ray diffraction analysis. Scanning electron microscopy analysis revealed that Ba-doping concentration influences the size of the thin film's nanoparticles. Xray diffraction results showed that all of the thin films are in a face centered cubic structure. Optical studies, in the room temperature, revealed that the optical band gap of the films increases as Ba-doping concentration is increased. The intercept values on the energy axis in the range of 1.86 eV and 2.12 eV for 1% and 8% Ba-doped PbS films respectively. As a result, it is concluded that the structural, optical and morphological properties of the fabricated thin films are directly depend on the Ba doping ratio.