Impact of gold nanoparticles on low-voltage operating GaN ultraviolet photodetector

TEKER K., Alkhaldi A.

OPTICAL ENGINEERING, cilt.59, sa.12, 2020 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 59 Sayı: 12
  • Basım Tarihi: 2020
  • Doi Numarası: 10.1117/1.oe.59.12.127110
  • Dergi Adı: OPTICAL ENGINEERING
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus, Academic Search Premier, Aerospace Database, Applied Science & Technology Source, Communication Abstracts, Compendex, Computer & Applied Sciences, INSPEC, Metadex, Civil Engineering Abstracts
  • Anahtar Kelimeler: GaN-ultraviolet photodetector, surface-plasmon resonance effect, Au nanoparticles, high-detectivity, UV PHOTODETECTORS, HIGH-SPEED, ENHANCEMENT, DETECTORS
  • Marmara Üniversitesi Adresli: Evet

Özet

We report, in this study, the impact of gold nanoparticles on low-voltage operating GaN ultraviolet (UV) photodetector through parameters such as detectivity, responsivity, repeatability, stability, and photo-to-dark current ratios. These studies revealed prominent increases in detectivity and responsivity of the device due to Au nanoparticle application, thus allowing it to detect weaker signals and obtain higher on/off current ratios. After the application of different quantities of Au nanoparticles to the device surface, the investigated photoelectric properties were enhanced reaching a peak detectivity of 1.09 x 10(11) Jones and a photo- to-dark current ratio of 486 at 2-V bias. Moreover, the photocurrent increased by two-fold (from 35.3 to 70.6 nA) at a low bias of 0.5 V following the application of the Au nanoparticles to the device surface. The modified GaN photodetector with a remarkable detectivity offers solutions toward improving detectivity of UV photodetectors. In consequence, having established such prosperous properties under relatively low-voltage levels with this practical and cost-effective fabrication route provides a good approach toward a wide range of UVoptoelectronic devices. (c) 2020 Society of PhotoOptical Instrumentation Engineers (SPIE)