Investigation of pH Effect on the Performance of Undoped Silicon Carbide Nanowire Field-Effect Transistors for the Development of Chemical Sensors and Biosensors

Mousa H., Awais M., TEKER K.

JOURNAL OF ELECTRONIC MATERIALS, cilt.51, sa.5, ss.2062-2069, 2022 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 51 Sayı: 5
  • Basım Tarihi: 2022
  • Doi Numarası: 10.1007/s11664-022-09468-z
  • Dergi Adı: JOURNAL OF ELECTRONIC MATERIALS
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus, PASCAL, Applied Science & Technology Source, Chemical Abstracts Core, Chimica, Compendex, Computer & Applied Sciences, INSPEC
  • Sayfa Sayıları: ss.2062-2069
  • Anahtar Kelimeler: pH effect, biochemical sensing, undoped SiC nanowires, SiCNW-FETs, environmental sensing, FABRICATION
  • Marmara Üniversitesi Adresli: Evet

Özet

The effect of pH on the performance of undoped silicon carbide nanowire field-effect transistors (SiCNW-FETs) was systematically studied using various solutions with pH ranging from pH 2 to pH 13 and important transport parameters such as transconductance, mobility, and resistivity were reported. Interestingly, at 2 V, alkaline solutions with high pH value (pH 13) revealed a higher transconductance of 7.13 nS and lower resistivity of 40 omega cm as compared to acidic solutions with 0.01 nS and 2.1x10(4) omega cm at pH 2, respectively. A model describing the pH-dependent conductance of the SiCNW-FETs was proposed. Moreover, a comprehensive comparison of the pH effects on the transport properties of the undoped SiCNW-FETs and nitrogen-doped SiCNW-FET was presented and the measurements clearly revealed opposite trends for a wide range of pH solutions. In short, our SiCNW-FETs with high sensitivity, high stability, and minuscule sample volume can provide solutions for the development of harsh environment compatible nanosensors for chemical, biochemical, and environmental sensing applications.