Production of next generation InP-HBT epiwafers by MBE


Lubyshev D., Malis O., Teker K., Wu Y., Fastenau J., Fang X., ...Daha Fazla

2003 International Conference Indium Phosphide and Related Materials, Santa Barbara, CA, Amerika Birleşik Devletleri, 12 - 16 Mayıs 2003, ss.385-388 identifier

  • Yayın Türü: Bildiri / Tam Metin Bildiri
  • Cilt numarası:
  • Basıldığı Şehir: Santa Barbara, CA
  • Basıldığı Ülke: Amerika Birleşik Devletleri
  • Sayfa Sayıları: ss.385-388
  • Marmara Üniversitesi Adresli: Hayır

Özet

The current status of InP-based HBT epiwafer production using multi-wafer MBE systems at IQE Inc. is presented. Control and stability of critical material growth parameters demonstrate reproducible quality of standard InP/InGaAs/InAlAs HBT structures grown on 4-inch diameter substrates. Experimental data from HBTs grown on newly developed 6-inch substrates exhibit good material and device parameters. Development of next-generation structures, including GaAsSb-base and metamorphic HBTs, is also discussed.