Lead lanthanum zirconate titanate, PLZT (9/65/35) thin films were deposited on r-plane sapphire and Pt/Si by triode-magnetron sputtering at low temperature and transformed to the perovskite phase by rapid-thermal annealing. To form perovskite phase directly during deposition high substrate temperatures which cause lead and/or titanium deficiency. At relatively low deposition temperatures, the deposited films tend to consist of both pyrochlore and perovskite phases. A full transformation of pyrochlore to perovskite phase is difficult. With low temperature deposition and rapid-thermal annealing, perovskite PLZT (9/65/35) films with strong (110) orientation were obtained. Their optical and dielectric properties are reported.