Ferroelectric PLZT thin films deposited by RF triode magnetron sputtering for spatial light modulators

Tunaboylu B. , Harvey P., Deng F., Fan C., Esener S.

10th IEEE International Symposium on Applications of Ferroelectrics (ISAF 96), New Jersey, United States Of America, 18 - 21 August 1996, pp.675-678 identifier identifier

  • Publication Type: Conference Paper / Full Text
  • Volume:
  • City: New Jersey
  • Country: United States Of America
  • Page Numbers: pp.675-678


Lead lanthanum zirconate titanate, PLZT (9/65/35) thin films were deposited on r-plane sapphire and Pt/Si by triode-magnetron sputtering at low temperature and transformed to the perovskite phase by rapid-thermal annealing. To form perovskite phase directly during deposition high substrate temperatures which cause lead and/or titanium deficiency. At relatively low deposition temperatures, the deposited films tend to consist of both pyrochlore and perovskite phases. A full transformation of pyrochlore to perovskite phase is difficult. With low temperature deposition and rapid-thermal annealing, perovskite PLZT (9/65/35) films with strong (110) orientation were obtained. Their optical and dielectric properties are reported.