Ferroelectric PLZT thin films deposited by RF triode magnetron sputtering for spatial light modulators

Tunaboylu B., Harvey P., Deng F., Fan C., Esener S.

10th IEEE International Symposium on Applications of Ferroelectrics (ISAF 96), New Jersey, United States Of America, 18 - 21 August 1996, pp.675-678 identifier identifier

  • Publication Type: Conference Paper / Full Text
  • Volume:
  • City: New Jersey
  • Country: United States Of America
  • Page Numbers: pp.675-678
  • Marmara University Affiliated: Yes


Lead lanthanum zirconate titanate, PLZT (9/65/35) thin films were deposited on r-plane sapphire and Pt/Si by triode-magnetron sputtering at low temperature and transformed to the perovskite phase by rapid-thermal annealing. To form perovskite phase directly during deposition high substrate temperatures which cause lead and/or titanium deficiency. At relatively low deposition temperatures, the deposited films tend to consist of both pyrochlore and perovskite phases. A full transformation of pyrochlore to perovskite phase is difficult. With low temperature deposition and rapid-thermal annealing, perovskite PLZT (9/65/35) films with strong (110) orientation were obtained. Their optical and dielectric properties are reported.