AlSunaidi, M. And El-Ghazaly, S. M. 1995. High-frequency large-signal physical modeling of microwave semiconductor devices. Proceedings of the 1995 IEEE MTT-S International Microwave Symposium. Part 1 (of 3) , (Orlando, FL, USA) , 619-621.

AlSunaidi, M., & El-Ghazaly, S. M., (1995). High-frequency large-signal physical modeling of microwave semiconductor devices . Proceedings of the 1995 IEEE MTT-S International Microwave Symposium. Part 1 (of 3) (pp.619-621). Orlando, FL, USA

AlSunaidi, MOHAMMAD, And Samir M. El-Ghazaly. "High-frequency large-signal physical modeling of microwave semiconductor devices," Proceedings of the 1995 IEEE MTT-S International Microwave Symposium. Part 1 (of 3), Orlando, FL, USA, 1995

AlSunaidi, MOHAMMAD A. And El-Ghazaly, Samir M. . "High-frequency large-signal physical modeling of microwave semiconductor devices." Proceedings of the 1995 IEEE MTT-S International Microwave Symposium. Part 1 (of 3) , Orlando, FL, USA, pp.619-621, 1995

AlSunaidi, M. And El-Ghazaly, S. M. (1995) . "High-frequency large-signal physical modeling of microwave semiconductor devices." Proceedings of the 1995 IEEE MTT-S International Microwave Symposium. Part 1 (of 3) , Orlando, FL, USA, pp.619-621.

@conferencepaper{conferencepaper, author={MOHAMMAD ABDULAZIZ H ALSUNAIDI And author={Samir M. El-Ghazaly}, title={High-frequency large-signal physical modeling of microwave semiconductor devices}, congress name={Proceedings of the 1995 IEEE MTT-S International Microwave Symposium. Part 1 (of 3)}, city={Orlando, FL, USA}, country={}, year={1995}, pages={619-621} }