H. Mousa And K. TEKER, "High-transconductance silicon carbide nanowire-based field-effect transistor (SiC-NWFET) for high-temperature applications," MICROELECTRONICS INTERNATIONAL , vol.38, no.2, pp.78-83, 2021
Mousa, H. And TEKER, K. 2021. High-transconductance silicon carbide nanowire-based field-effect transistor (SiC-NWFET) for high-temperature applications. MICROELECTRONICS INTERNATIONAL , vol.38, no.2 , 78-83.
Mousa, H., & TEKER, K., (2021). High-transconductance silicon carbide nanowire-based field-effect transistor (SiC-NWFET) for high-temperature applications. MICROELECTRONICS INTERNATIONAL , vol.38, no.2, 78-83.
Mousa, Habeeb, And KAŞİF TEKER. "High-transconductance silicon carbide nanowire-based field-effect transistor (SiC-NWFET) for high-temperature applications," MICROELECTRONICS INTERNATIONAL , vol.38, no.2, 78-83, 2021
Mousa, Habeeb And TEKER, KAŞİF. "High-transconductance silicon carbide nanowire-based field-effect transistor (SiC-NWFET) for high-temperature applications." MICROELECTRONICS INTERNATIONAL , vol.38, no.2, pp.78-83, 2021
Mousa, H. And TEKER, K. (2021) . "High-transconductance silicon carbide nanowire-based field-effect transistor (SiC-NWFET) for high-temperature applications." MICROELECTRONICS INTERNATIONAL , vol.38, no.2, pp.78-83.
@article{article, author={Habeeb Mousa And author={KAŞİF TEKER}, title={High-transconductance silicon carbide nanowire-based field-effect transistor (SiC-NWFET) for high-temperature applications}, journal={MICROELECTRONICS INTERNATIONAL}, year=2021, pages={78-83} }