Haider, A. Et Al. 2016. Effect of Substrate Temperature and Ga source Precursor on Growth and Material Properties of GaN Grown by Hollow Cathode Plasma Assisted Atomic Layer Deposition. 36th IEEE International Conference on Electronics and Nanotechnology (ELNANO) , (Kyiv, Ukraine), 132-134.

Haider, A., Kizir, S., Deminskyi, P., Tsymbalenko, O., Leghari, S. A., BIYIKLI, N., ... ALEVLİ, M.(2016). Effect of Substrate Temperature and Ga source Precursor on Growth and Material Properties of GaN Grown by Hollow Cathode Plasma Assisted Atomic Layer Deposition . 36th IEEE International Conference on Electronics and Nanotechnology (ELNANO) (pp.132-134). Kyiv, Ukraine

Haider, Ali Et Al. "Effect of Substrate Temperature and Ga source Precursor on Growth and Material Properties of GaN Grown by Hollow Cathode Plasma Assisted Atomic Layer Deposition," 36th IEEE International Conference on Electronics and Nanotechnology (ELNANO), Kyiv, Ukraine, 2016

Haider, Ali Et Al. "Effect of Substrate Temperature and Ga source Precursor on Growth and Material Properties of GaN Grown by Hollow Cathode Plasma Assisted Atomic Layer Deposition." 36th IEEE International Conference on Electronics and Nanotechnology (ELNANO) , Kyiv, Ukraine, pp.132-134, 2016

Haider, A. Et Al. (2016) . "Effect of Substrate Temperature and Ga source Precursor on Growth and Material Properties of GaN Grown by Hollow Cathode Plasma Assisted Atomic Layer Deposition." 36th IEEE International Conference on Electronics and Nanotechnology (ELNANO) , Kyiv, Ukraine, pp.132-134.

@conferencepaper{conferencepaper, author={Ali Haider Et Al. }, title={Effect of Substrate Temperature and Ga source Precursor on Growth and Material Properties of GaN Grown by Hollow Cathode Plasma Assisted Atomic Layer Deposition}, congress name={36th IEEE International Conference on Electronics and Nanotechnology (ELNANO)}, city={Kyiv}, country={Ukraine}, year={2016}, pages={132-134} }