Bhatta, R. P. Et Al. 2007. Carrier concentration and surface electron accumulation in indium nitride layers grown by high pressure chemical vapor deposition. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A , vol.25, no.4 , 967-970.

Bhatta, R. P., Thoms, B. D., Weerasekera, A., Perera, A. G., ALEVLİ, M., & Dietz, N., (2007). Carrier concentration and surface electron accumulation in indium nitride layers grown by high pressure chemical vapor deposition. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A , vol.25, no.4, 967-970.

Bhatta, R Et Al. "Carrier concentration and surface electron accumulation in indium nitride layers grown by high pressure chemical vapor deposition," JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A , vol.25, no.4, 967-970, 2007

Bhatta, R P. Et Al. "Carrier concentration and surface electron accumulation in indium nitride layers grown by high pressure chemical vapor deposition." JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A , vol.25, no.4, pp.967-970, 2007

Bhatta, R. P. Et Al. (2007) . "Carrier concentration and surface electron accumulation in indium nitride layers grown by high pressure chemical vapor deposition." JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A , vol.25, no.4, pp.967-970.

@article{article, author={R P Bhatta Et Al. }, title={Carrier concentration and surface electron accumulation in indium nitride layers grown by high pressure chemical vapor deposition}, journal={JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A}, year=2007, pages={967-970} }