ALEVLİ, M. Et Al. 2016. Comparison of trimethylgallium and triethylgallium as "Ga" source materials for the growth of ultrathin GaN films on Si (100) substrates via hollow-cathode plasma-assisted atomic layer deposition. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A , vol.34, no.1 .

ALEVLİ, M., Haider, A., Kizir, S., Leghari, S. A., & BIYIKLI, N., (2016). Comparison of trimethylgallium and triethylgallium as "Ga" source materials for the growth of ultrathin GaN films on Si (100) substrates via hollow-cathode plasma-assisted atomic layer deposition. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A , vol.34, no.1.

ALEVLİ, MUSTAFA Et Al. "Comparison of trimethylgallium and triethylgallium as "Ga" source materials for the growth of ultrathin GaN films on Si (100) substrates via hollow-cathode plasma-assisted atomic layer deposition," JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A , vol.34, no.1, 2016

ALEVLİ, MUSTAFA Et Al. "Comparison of trimethylgallium and triethylgallium as "Ga" source materials for the growth of ultrathin GaN films on Si (100) substrates via hollow-cathode plasma-assisted atomic layer deposition." JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A , vol.34, no.1, 2016

ALEVLİ, M. Et Al. (2016) . "Comparison of trimethylgallium and triethylgallium as "Ga" source materials for the growth of ultrathin GaN films on Si (100) substrates via hollow-cathode plasma-assisted atomic layer deposition." JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A , vol.34, no.1.

@article{article, author={MUSTAFA ALEVLİ Et Al. }, title={Comparison of trimethylgallium and triethylgallium as "Ga" source materials for the growth of ultrathin GaN films on Si (100) substrates via hollow-cathode plasma-assisted atomic layer deposition}, journal={JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A}, year=2016}