K. Lee Et Al. , "Effect of TMG addition on the epitaxial growth of 3C-SiC on Si(100) and Si(111) using hexamethyldisilane," Silicon Carbide- Materials, Processing and Devices , vol.640, Boston, MA, United States Of America, 2000
Lee, K. Et Al. 2000. Effect of TMG addition on the epitaxial growth of 3C-SiC on Si(100) and Si(111) using hexamethyldisilane. Silicon Carbide- Materials, Processing and Devices , (Boston, MA, United States Of America).
Lee, K., Teker, K., Zhang, M., Chung, J., & Pirouz, P., (2000). Effect of TMG addition on the epitaxial growth of 3C-SiC on Si(100) and Si(111) using hexamethyldisilane . Silicon Carbide- Materials, Processing and Devices, Boston, MA, United States Of America
Lee, K.H. Et Al. "Effect of TMG addition on the epitaxial growth of 3C-SiC on Si(100) and Si(111) using hexamethyldisilane," Silicon Carbide- Materials, Processing and Devices, Boston, MA, United States Of America, 2000
Lee, K.H. Et Al. "Effect of TMG addition on the epitaxial growth of 3C-SiC on Si(100) and Si(111) using hexamethyldisilane." Silicon Carbide- Materials, Processing and Devices , Boston, MA, United States Of America, 2000
Lee, K. Et Al. (2000) . "Effect of TMG addition on the epitaxial growth of 3C-SiC on Si(100) and Si(111) using hexamethyldisilane." Silicon Carbide- Materials, Processing and Devices , Boston, MA, United States Of America.
@conferencepaper{conferencepaper, author={K.H. Lee Et Al. }, title={Effect of TMG addition on the epitaxial growth of 3C-SiC on Si(100) and Si(111) using hexamethyldisilane}, congress name={Silicon Carbide- Materials, Processing and Devices}, city={Boston, MA}, country={United States Of America}, year={2000}}