K. Teker, "Selective epitaxial growth of 3C-SiC on patterned Si using hexamethyldisilane by APCVD," JOURNAL OF CRYSTAL GROWTH , vol.257, pp.245-254, 2003
Teker, K. 2003. Selective epitaxial growth of 3C-SiC on patterned Si using hexamethyldisilane by APCVD. JOURNAL OF CRYSTAL GROWTH , vol.257 , 245-254.
Teker, K., (2003). Selective epitaxial growth of 3C-SiC on patterned Si using hexamethyldisilane by APCVD. JOURNAL OF CRYSTAL GROWTH , vol.257, 245-254.
Teker, KAŞİF. "Selective epitaxial growth of 3C-SiC on patterned Si using hexamethyldisilane by APCVD," JOURNAL OF CRYSTAL GROWTH , vol.257, 245-254, 2003
Teker, KAŞİF. "Selective epitaxial growth of 3C-SiC on patterned Si using hexamethyldisilane by APCVD." JOURNAL OF CRYSTAL GROWTH , vol.257, pp.245-254, 2003
Teker, K. (2003) . "Selective epitaxial growth of 3C-SiC on patterned Si using hexamethyldisilane by APCVD." JOURNAL OF CRYSTAL GROWTH , vol.257, pp.245-254.
@article{article, author={KAŞİF TEKER}, title={Selective epitaxial growth of 3C-SiC on patterned Si using hexamethyldisilane by APCVD}, journal={JOURNAL OF CRYSTAL GROWTH}, year=2003, pages={245-254} }