K. Teker Et Al. , "Epitaxial growth of SiC on AlN/Sapphire using hexamethyldisilane by MOVPE," Silicon Carbide- Materials, Processing and Devices , vol.640, Boston, MA, United States Of America, 2000
Teker, K. Et Al. 2000. Epitaxial growth of SiC on AlN/Sapphire using hexamethyldisilane by MOVPE. Silicon Carbide- Materials, Processing and Devices , (Boston, MA, United States Of America).
Teker, K., Lee, K., Jacob, C., Nishino, S., & Pirouz, P., (2000). Epitaxial growth of SiC on AlN/Sapphire using hexamethyldisilane by MOVPE . Silicon Carbide- Materials, Processing and Devices, Boston, MA, United States Of America
Teker, KAŞİF Et Al. "Epitaxial growth of SiC on AlN/Sapphire using hexamethyldisilane by MOVPE," Silicon Carbide- Materials, Processing and Devices, Boston, MA, United States Of America, 2000
Teker, KAŞİF Et Al. "Epitaxial growth of SiC on AlN/Sapphire using hexamethyldisilane by MOVPE." Silicon Carbide- Materials, Processing and Devices , Boston, MA, United States Of America, 2000
Teker, K. Et Al. (2000) . "Epitaxial growth of SiC on AlN/Sapphire using hexamethyldisilane by MOVPE." Silicon Carbide- Materials, Processing and Devices , Boston, MA, United States Of America.
@conferencepaper{conferencepaper, author={KAŞİF TEKER Et Al. }, title={Epitaxial growth of SiC on AlN/Sapphire using hexamethyldisilane by MOVPE}, congress name={Silicon Carbide- Materials, Processing and Devices}, city={Boston, MA}, country={United States Of America}, year={2000}}