K. Lee Et Al. , "Comparison of different substrate pre-treatments on the quality of gan film growth on 6H-, 4H-, and 3C-SiC," Wide-Bandgap Electronic Devices , vol.622, San Francisco, CA, United States Of America, 2000
Lee, K. Et Al. 2000. Comparison of different substrate pre-treatments on the quality of gan film growth on 6H-, 4H-, and 3C-SiC. Wide-Bandgap Electronic Devices , (San Francisco, CA, United States Of America).
Lee, K., Hong, M., Teker, K., Jacob, C., & Pirouz, P., (2000). Comparison of different substrate pre-treatments on the quality of gan film growth on 6H-, 4H-, and 3C-SiC . Wide-Bandgap Electronic Devices, San Francisco, CA, United States Of America
Lee, K.H. Et Al. "Comparison of different substrate pre-treatments on the quality of gan film growth on 6H-, 4H-, and 3C-SiC," Wide-Bandgap Electronic Devices, San Francisco, CA, United States Of America, 2000
Lee, K.H. Et Al. "Comparison of different substrate pre-treatments on the quality of gan film growth on 6H-, 4H-, and 3C-SiC." Wide-Bandgap Electronic Devices , San Francisco, CA, United States Of America, 2000
Lee, K. Et Al. (2000) . "Comparison of different substrate pre-treatments on the quality of gan film growth on 6H-, 4H-, and 3C-SiC." Wide-Bandgap Electronic Devices , San Francisco, CA, United States Of America.
@conferencepaper{conferencepaper, author={K.H. Lee Et Al. }, title={Comparison of different substrate pre-treatments on the quality of gan film growth on 6H-, 4H-, and 3C-SiC}, congress name={Wide-Bandgap Electronic Devices}, city={San Francisco, CA}, country={United States Of America}, year={2000}}