Alevli, M. Et Al. 2014. Effect of reactor pressure on optical and electrical properties of InN films grown by high-pressure chemical vapor deposition. 5th International Symposium on Growth of III-Nitrides (ISGN) , (Georgia, United States Of America), 423-429.

Alevli, M., Gungor, N., Alkis, S., Ozgit-Akgun, C., Donmez, I., Okyay, A. K., ... Gamage, S.(2014). Effect of reactor pressure on optical and electrical properties of InN films grown by high-pressure chemical vapor deposition . 5th International Symposium on Growth of III-Nitrides (ISGN) (pp.423-429). Georgia, United States Of America

Alevli, MUSTAFA Et Al. "Effect of reactor pressure on optical and electrical properties of InN films grown by high-pressure chemical vapor deposition," 5th International Symposium on Growth of III-Nitrides (ISGN), Georgia, United States Of America, 2014

Alevli, MUSTAFA Et Al. "Effect of reactor pressure on optical and electrical properties of InN films grown by high-pressure chemical vapor deposition." 5th International Symposium on Growth of III-Nitrides (ISGN) , Georgia, United States Of America, pp.423-429, 2014

Alevli, M. Et Al. (2014) . "Effect of reactor pressure on optical and electrical properties of InN films grown by high-pressure chemical vapor deposition." 5th International Symposium on Growth of III-Nitrides (ISGN) , Georgia, United States Of America, pp.423-429.

@conferencepaper{conferencepaper, author={MUSTAFA ALEVLİ Et Al. }, title={Effect of reactor pressure on optical and electrical properties of InN films grown by high-pressure chemical vapor deposition}, congress name={5th International Symposium on Growth of III-Nitrides (ISGN)}, city={Georgia}, country={United States Of America}, year={2014}, pages={423-429} }